P4C1256-35DCLF

P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military) Low Power Single 5V±10% Power Supply Easy Memory Expansion Using CE and OE CE OE Inputs Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin SOP —28-Pin LCC (350 mil x 550 mil) —32-Pin LCC (450 mil x 550 mil) DESCRIPTION The P4C1256 is a 262,144-bit high-speed CMOS static RAM organized as 32Kx8. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply. Access times as fast as 12 nanoseconds permit greatly enhanced system operating speeds. CMOS is utilized to reduce power consumption to a low level. The P4C1256 is a member of a family of PACE RAM™ products offering fast access times. The P4C1256 device provides asynchronous operation with matching access and cycle times. Memory locations are specified on address pins A0 to A14. Reading is accomplished by device selection (CE and output enabling (OE) while write enable (WE) remains HIGH. By presenting the address under these conditions, the data in the addressed memory location is presented on the data input/output pins. The input/output pins stay in the HIGH Z state when either CE or OE is HIGH or WE is LOW. Package options for the P4C1256 include 28-pin 300 mil DIP, SOJ and TSOP packages. For military temperature range, Ceramic DIP and LCC packages are available. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS DIP (P5, C5, C5-1, D5-2), SOJ (J5), SOP (S11-1, S11-3) CERPACK (F4) SIMILAR 1519B See end of datasheet for LCC and TSOP pin configurations. Document # SRAM119 REV G 1 Revised June 2007 P4C1256 MAXIMUM RATINGS(1) Symbol V CC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value –0.5 to +7 –0.5 to VCC +0.5 –55 to +125 Unit V Symbol TBIAS TSTG V °C PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value –55 to +125 –65 to +150 1.0 50 Unit °C °C W mA V TERM TA RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) Military Ambient Temperature GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10% CAPACITANCES(4) VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 8 10 pF pF –55°C to +125°C –40°C to +85°C Industrial Commercial 0°C to +70°C Output Capacitance VOUT = 0V DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) Symbol VIH VIL V HC VLC VOL VOH Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current IOL = +8 mA, VCC = Min. IOH = –4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., ILO Output Leakage Current CE = VIH, VOUT = GND to VCC CE ≥ VIH ISB Mil. ___ ___ 45 30 ___ ___ 30 n/a mA Mil. Ind./Com’l. Mil. Ind./Com’l. 2.4 –10 –5 –10 –5 +10 +5 +10 +5 Test Conditions P4C1256 Min Max VCC +0.5 2.2 P4C1256L Unit Min Max VCC +0.5 V 2.2 V V V V V +5 n/a +5 n/a µA µA 0.8 0.8 –0.5(3) –0.5(3) VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5 –0.5 (3) 0.2 0.4 –0.5 (3) 0.2 0.4 2.4 –5 n/a –5 n/a ILI Standby Power Supply VCC= Max, Ind./Com’l. Current (TTL Input Levels) f = Max., Outputs Open CE ≥ VHC ISB1 Standby Power Supply Current (CMOS Input Levels) VCC= Max, f = 0, Outputs Open VIN ≤ VLC or VIN ≥ VHC Mil. Ind./Com’l. ___ ___ 20 10 ___ ___ 10 n/a mA N/A = Not Applicable Document # SRAM119 REV G Page 2 of 17 P4C1256 DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only) Symbol V DR ICCDR t CDR tR † *TA = +25°C §tRC = Read Cycle Time † Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons Min 2.0 Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V Unit V CE ≥ VCC –0.2V, VIN ≥ VCC –0.2V or VIN ≤ 0.2V 0 tRC§ 10 15 100 200 µA ns ns This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter Temperature Range Commercial Military –12 170 N/A N/A –15 160 170 N/A –20 155 165 170 –25 150 160 165 –35 145 155 160 –45 N/A 150 155 –55 N/A N/A 150 –70 N/A N/A 150 Unit mA mA mA ICC Dynamic Operating Current* Industrial *VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH. Document # SRAM119 REV G Page 3 of 17 P4C1256 AC ELECTRICAL CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym. t RC tAA t AC t OH tLZ t HZ tOE Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable Low to Data Valid Output Enable Low to Low Z Output Enable High to High Z Chip Enable to Power Up Time Chip Disable to Power Down Time 0 0 2 2 -12 12 12 12 2 2 5 5 -15 15 15 15 2 2 8 7 20 -20 25 20 20 3 3 9 9 -25 35 25 25 3 3 11 10 -35 45 35 35 3 3 15 15 -45 55 45 45 3 3 20 20 -55 70 55 55 3 3 25 25 -70 Unit ns Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max 70 70 ns ns ns ns 30 30 ns ns tOLZ t OHZ t PU t PD 0 5 0 12 15 7 0 9 0 20 0 11 0 20 0 15 0 20 0 20 0 25 0 25 0 30 0 30 0 35 ns ns ns ns Document # SRAM119 REV G Page 4 of 17 P4C1256 TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)(5) TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)(5,6) TIMING WAVEFORM OF READ CYCLE NO. 3 (CE CONTROLLED)(5,7) Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 5. WE is HIGH for READ cycle. 6. CE is LOW and OE is LOW for READ cycle. 7. ADDRESS must be valid prior to, or coincident with CE transition LOW. 8. Transition is measured ± 200 mV from steady state voltage prior to change, with loading as specified in Figure 1. This parameter is sampled and not 100% tested. 9. Read Cycle Time is measured from the last valid address to the first transitioning address. Document # SRAM119 REV G Page 5 of 17 P4C1256 AC CHARACTERISTICS—WRITE CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Sym. tWC tCW Parameter -12 -15 15 10 20 -20 25 -25 35 22 -35 45 -45 55 -55 70 -70 Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit ns ns Write Cycle Time 12 Chip Enable Time to End of Write Address Valid to End of Write Address Set-up Time Write Pulse Width Address Hold Time Data Valid to End of Write Date Hold Time Write Enable to Output in High Z Output Active from End of Write 3 9 15 18 30 35 40 tAW tAS tWP tAH tDW t DH tWZ tOW 9 0 9 0 8 0 7 10 0 11 0 9 0 8 3 15 0 15 0 11 0 10 3 20 0 18 0 13 0 11 3 25 0 22 0 15 0 15 5 35 0 25 0 20 0 18 5 40 0 30 0 25 0 25 0 45 0 35 0 30 0 30 0 ns ns ns ns ns ns ns ns TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10,11) Document # SRAM119 REV G Page 6 of 17 P4C1256 TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(10) Notes: 10. CE and WE must be LOW for WRITE cycle. 11. OE is LOW for this WRITE cycle to show tWZ and tOW. 12. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state 13. Write Cycle Time is measured from the last valid address to the first transitioning address. Document # SRAM119 REV G Page 7 of 17 P4C1256 AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input Timing Reference Level Output Timing Reference Level Output Load GND to 3.0V 3ns 1.5V 1.5V See Figures 1 and 2 TRUTH TABLE Mode Standby Standby DOUT Disabled Read Write CE O E W E H X L L L X X H L X X X H H L I/O High Z High Z High Z DOUT High Z Power Standby Standby Active Active Active Figure 1. Output Load * including scope and test fixture. Note: Because of the ultra-high speed of the P4C1256, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the VCC and ground planes directly up to the contactor fingers. A 0.01 µF high frequency capacitor is also required between VCC and ground. To avoid signal reflections, proper termination Figure 2. Thevenin Equivalent must be used; for example, a 50Ω test environment should be terminated into a 50Ω load with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω resistor must be used in series with DOUT to match 166Ω (Thevenin Resistance). Document # SRAM119 REV G Page 8 of 17 P4C1256 ORDERING INFORMATION SELECTION GUIDE The P4C1256 is available in the following temperature, speed and package options. The P4C1256L is available only over the military temperature range. ** Temperature Range Commercial Speed Package Plastic DIP Plastic SOJ Plastic TSOP Plastic SOP (S11-1) Industrial Plastic SOP (S11-3) Plastic DIP Plastic SOJ Plastic TSOP Plastic SOP (S11-1) Plastic SOP (S11-3) 12 -12PC -12JC -12TC -12SC -12SSC N/A N/A N/A N/A N/A 15 -15PC -15JC -15TC -15SC -15SSC -15PI -15JI -15TI -15SI -15SSI 20 -20PC -20JC -20TC -20SC -20SSC -20PI -20JI -20TI -20SI -20SSI 25 -25PC -25JC -25TC -25SC -25SSC -25PI -25JI -25TI -25SI -25SSI 35 -35PC -35JC -35TC -35SC -35SSC -35PI -35JI -35TI -35SI -35SSI 45 N/A N/A N/A N/A N/A -45PI -45JI -45TI -45SI -45SSI 55 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A 70 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A * Military temperature range with MIL-STD-883, Class B processing. ** For RoHS compliant plastic products, the suffix "LF" (Lead Free) should be added to the part number. N/A = Not Available Document # SRAM119 REV G Page 9 of 17 P4C1256 SELECTION GUIDE (CONTINUED) Temperature Range Military Temperature Package Side Brazed DIP (300 mil) Side Brazed DIP (600 mil) Ceramic DIP CERPACK LCC (28-Pin) LCC (32-Pin) Military Processed* Side Brazed DIP (300 mil) Side Brazed DIP (600 mil) Ceramic DIP CERPACK LCC (28-Pin) LCC (32-Pin) Speed 12 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A 15 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A 20 -20CM -20CWM -20DM -20FM -20L28M -20L32M -20CMB -20CWMB -20DMB -20FMB -20L28MB -20L32MB 25 -25CM -25CWM -25DM -25FM -25L28M -25L32M -25CMB -25CWMB -25DMB -25FMB -25L28MB -25L32MB 35 -35CM -35CWM -35DM -35FM -35L28M -35L32M -35CMB -35CWMB -35DMB -35FMB -35L28MB -35L32MB 45 -45CM -45CWM -45DM -45FM -45L28M -45L32M -45CMB -45CWMB -45DMB -45FMB -45L28MB -45L32MB 55 -55CM -55CWM -55DM -55FM -55L28M -55L32M -55CMB -55CWMB -55DMB -55FMB -55L28MB -55L32MB 70 -70CM -70CWM -70DM -70FM -70L28M -70L32M -70CMB -70CWMB -70DMB -70FMB -70L28MB -70L32MB LCC PIN CONFIGURATIONS 28 LCC (L5) 32 LCC (L6) TSOP (T1) Document # SRAM119 REV G Page 10 of 17 P4C1256 Pkg # # Pins Symbol A b b2 C D E eA e L Q S1 S2 C5 28 (300 mil) Min Max 0.225 0.014 0.026 0.045 0.065 0.008 0.018 1.485 0.240 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.070 0.005 0.005 - SIDE BRAZED CERAMIC DUAL IN-LINE PACKAGE (300 Mils) Pkg # # Pins Symbol A b b2 C D E eA e L Q S1 S2 C5-1 28 (600 mil) Min Max 0.232 0.014 0.026 0.045 0.065 0.008 0.018 1.490 0.500 0.610 0.600 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 0.005 - SIDE BRAZED CERAMIC DUAL IN-LINE PACKAGE (600 Mils) Document # SRAM119 REV G Page 11 of 17 P4C1256 Pkg # # Pins Symbol A b b2 C D E eA e L Q S1 α D5-2 28 (300 mil) Min Max 0.225 0.014 0.026 0.045 0.065 0.008 0.018 1.485 0.240 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 0° 15° CERDIP DUAL IN-LINE PACKAGE Pkg # # Pins Symbol A b c D E e k L Q S S1 F4 28 Min Max 0.060 0.090 0.015 0.022 0.004 0.009 0.730 0.330 0.380 0.050 BSC 0.005 0.018 0.250 0.370 0.026 0.045 0.085 0.005 - CERPACK CERAMIC FLAT PACKAGE Document # SRAM119 REV G Page 12 of 17 P4C1256 Pkg # # Pins Symbol A A1 b C D e E E1 E2 Q J5 28 (300 mil) Min Max 0.120 0.148 0.078 0.014 0.020 0.007 0.011 0.700 0.730 0.050 BSC 0.335 BSC 0.292 0.300 0.267 BSC 0.025 - SOJ SMALL OUTLINE IC PACKAGE Pkg # # Pins Symbol A A1 B1 D D1 D2 D3 E E1 E2 E3 e h j L L1 L2 ND NE L5 28 Min Max 0.060 0.075 0.050 0.065 0.022 0.028 0.342 0.358 0.200 BSC 0.100 BSC 0.358 0.540 0.560 0.400 BSC 0.200 BSC 0.558 0.050 BSC 0.040 REF 0.020 REF 0.045 0.055 0.045 0.055 0.075 0.095 5 9 RECTANGULAR LEADLESS CHIP CARRIER (28 Pins) Document # SRAM119 REV G Page 13 of 17 P4C1256 Pkg # # Pins Symbol A A1 B1 D D1 D2 D3 E E1 E2 E3 e h j L L1 L2 ND NE L6 32 Min Max 0.060 0.075 0.050 0.065 0.022 0.028 0.442 0.458 0.300 BSC 0.150 BSC 0.458 0.540 0.560 0.400 BSC 0.200 BSC 0.558 0.050 BSC 0.040 REF 0.020 REF 0.045 0.055 0.045 0.055 0.075 0.095 7 9 RECTANGULAR LEADLESS CHIP CARRIER (32 Pins) Pkg # # Pins Symbol A A1 b b2 C D E1 E e eB L P5 28 (300 mil) Min Max 0.210 0.014 0.023 0.045 0.070 0.008 0.014 1.345 1.400 0.270 0.300 0.300 0.380 0.100 BSC 0.430 0.115 0.150 0° 15° PLASTIC DUAL IN-LINE PACKAGE α Document # SRAM119 REV G Page 14 of 17 P4C1256 Pkg # # Pins Symbol A A2 b D E e HD T1 28 Min Max 0.039 0.047 0.036 0.040 0.007 0.011 0.461 0.469 0.311 0.319 0.022 BSC 0.520 0.535 TSOP THIN SMALL OUTLINE PACKAGE (8 x 13.4 mm) Pkg # # Pins Symbol A A1 b2 C D e E H h L α S11-1 28 (300 Mil) Min Max 0.093 0.104 0.004 0.012 0.013 0.020 0.009 0.012 0.696 0.712 0.050 BSC 0.291 0.299 0.394 0.419 0.010 0.029 0.016 0.050 0° 8° SOIC/SOP SMALL OUTLINE IC PACKAGE Document # SRAM119 REV G Page 15 of 17 P4C1256 Pkg # # Pins Symbol A A1 B C D e E H h L α S11-3 28 (300 Mil) Min Max 0.094 0.110 0.002 0.014 0.014 0.020 0.008 0.012 0.702 0.710 0.050 BSC 0.291 0.300 0.463 0.477 0.010 0.029 0.020 0.042 0° 8° SOIC/SOP SMALL OUTLINE IC PACKAGE Document # SRAM119 REV G Page 16 of 17 P4C1256 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: REV. OR A B C D E F G ISSUE DATE 1997 Oct-05 Oct-05 Apr-06 May-06 Jun-06 Aug-06 Jun-07 SRAM119 HIGH SPEED 32K x 8 STATIC CMOS RAM ORIG. OF CHANGE RKK JDB JDB JDB JDB JDB JDB JDB DESCRIPTION OF CHANGE New Data Sheet Change logo to Pyramid Added SOP Package Added Lead-Free ordering information. Added PDIP to Ordering Information diagram Added Ceramic DIP package Updated SOJ package information Corrected SOP package information Document # SRAM119 REV G Page 17 of 17