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CNW85

CNW85

  • 厂商:

    QT

  • 封装:

  • 描述:

    CNW85 - WIDE BODY, HIGH ISOLATION OPTOCOUPLERS - QT Optoelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
CNW85 数据手册
WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity. 6 1 6 1 SCHEMATIC 1 NC 6 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm. • Minimum creepage distance 10 mm. • High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits. • High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)). • Minimum 2 mm isolation thickness between emitter and 3 CNW82 CNW83 CNW84 CNW85 1 6 2 5 2 5 NC 4 detector. (CNW84/85 only). • An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum. • Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only). • Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only). • UL recognized (File # E90700) CNW82/84 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. NO CONNECTION 3 NC 4 CNW83/85 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE ABSOLUTE MAXIMUM RATINGS Parameter EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100µs, 120pps) Reverse Voltage Total Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector Current-Continuous Emitter-Collector Voltage Collector-Emitter Voltage Collector-Base Voltage Total Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Storage Temperature Range Ambient Operating Temperature Range Lead Soldering Temperature (1/16” from case, 10 sec. duration) (CNW82/CNW83) (CNW84/CNW85) (CNW83) (CNW85) VECO VCEO VCBO PD Tstg TA TL Symbol IF IF(pk) VR PD IC Value 100 3 5 200 2.0 100 7 50 80 70 120 200 2.0 -55 to 150 -40 to 100 260 Units mA A V mW mW/°C mA V V V mW mW/°C °C °C °C 1/18/00 200015A WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 ELECTRICAL CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR (CNW82/83) Collector-Emitter Breakdown Voltage (CNW84/85) Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage (CNW83) (CNW85) (TA = 25°C) (TA = 70°C) (CNW83/85) (TA =25°C Unless otherwise specified) Test Conditions (IF = 10 mA) (VR = 5.0 V) (IC = 1.0 mA) (IE = 0.1 mA) (IC = 0.1 mA) (VCE = 10 V, IF = 0) (VCB = 10 V, IF = 0) Symbol VF IR BVCEO BVECO BVCBO ICEO ICBO VCE(sat) VISO RISO CISO CTR CCB TON TOFF Min — — 50 80 7 70 120 — — — — 8.34 5.9 1 — 0.4 0.63 — — — — — Typ 1.20 — 100 100 10 100 140 1 0.1 — 0.15 — — 10 0.4 0.8 1.5 4.5 3 12 3 12 Max 1.50 10 — — — — — 50 10 20 0.4 — — — 1 — 3.2 — — — — — Unit V µA V V V nA µA nA V kV T! pF % pF µs µs Collector-Emitter Dark Current Collector-Base Cut-off Current COUPLED Collector-Emitter Saturation Voltage Isolation Voltage Isolation Resistance Isolation Capacitance Current Transfer Ratio Capacitance Turn-on Time Turn-off Time (IC = 4 mA, IF = 10 mA) (DC Value) (RMS Value) (t = 1.0 min.)(1) (t = 1.0 min.)(1) (VI-O = 500 V) (CNW82/83) (CNW84/85) (CNW83/85) (VI-O = 0, f = 1.0 MHz) (IF = 10 mA, VCE = 0.4 V) (IF = 10 mA, VCE = 5 V) (VCB = 10 V, f = 1 MHz) (IC = 2 mA, VCC = 5 V, RL = 1 k!) (IC = 2 mA, VCC = 5 V, RL = 100 !) (IC = 2 mA, VCC = 5 V, RL = 100 !) (IC = 2 mA, VCC = 5 V, RL = 1 k!) NOTE: 1. Every product is tested with pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. 1/18/00 200015A WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Fig. 1 Forward Current vs. Forward Voltage 10 Fig. 2 Collector Current vs. Forward Current (for CNW84 and CNW85) 100 VCE = 24 V 1 IF - FORWARD CURRENT (mA) 75 IC - COLLECTOR CURRENT VCE = 15 V 10-1 VCE = 0.4 V VCE = 5 V 10-2 50 25 10-3 TA = 25˚C 0 0 0.5 1 1.5 Normalize to: VCE = 0.4 V IF = 10 mA TA = 25˚C 10-4 10-1 1 10 102 103 VF - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) Fig. 3 Collector Current vs. Forward Current (for CNW82 and CNW83) 102 =2 4 15 V V Fig. 4 Collector Current vs. Collector-Emitter Voltage 100 TA = 25˚C 10 5V TA = 25˚C 0.4 V IF = 100 mA IC - COLLECTOR CURRENT (mA) CE IC - COLLECTOR CURRENT (mA) V IF = 75 mA IF = 50 mA 1 50 10-1 IF = 25 mA 10-2 IF = 10 mA IF = 2.5 mA 10-3 10-1 1 10 102 103 0 0 5 10 IF - FORWARD CURRENT (mA) VCE - COLLECTOR-EMITTER VOLTAGE (V) Fig. 5 Collector Current vs. Ambient Temperature (for CNW82 and CNW83) 20 IF = 10 mA, VCE = 0.4 V IF = 10 mA, VCE = 5 V Fig. 6 Collector Current vs. Ambient Temperature (for CNW84 and CNW85) 1.5 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT typ 15 IF = 10 mA VCE = 5 V 10 typ 5 min IF = 10 mA VCE = 0.4 V 1.3 VCE = 5 V 1.1 0.9 VCE = 0.4 V 0.7 0 -50 0 50 100 150 0.5 -50 IF = 1 m A NORMALIZED TO VCE = 5 V TA = 25˚C 0 50 100 150 200 TA - AMBIENT TEMPERATURE (˚C) TA - AMBIENT TEMPERATURE (˚C) 1/18/00 200015A WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Fig. 7 Collector Current vs. Ambient Temperature (for CNW84 and CNW85) 2.0 105 Fig. 8 Collector-Emitter Dark Current vs. Junction Temperature 1.6 ICEO - COLLECTOR-EMITTER DARK CURRENT (nA) IC - COLLECTOR CURRENT 104 VCE = 50 V 103 1.2 VCE = 5 V 0.8 10V 0.4 IF = 10 mA NORMALIZED TO VCE = 0.4 V TA = 25˚C -50 0 50 100 VCE = 0.4 V 102 VCE = 5 V 0 150 200 10 TA - AMBIENT TEMPERATURE (˚C) 1 10-1 25 45 65 85 105 125 TJ - JUNCTION TEMPERATURE (˚C) Fig. 9 Collector-Emitter Saturation Voltage vs. Collector Current 103 Fig. 10 Rise and Fall Time vs. Collector Current 60 VCE(SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (mV) TON/TOFF -SWITCHING TIME (µs) TA = 25˚C 40 RL = 5 k ! IF = 5 m A 102 20 RL = 1 k ! RL = 100 ! 0 0.1 1 10 10 mA 100 mA 10 25 mA 10-2 50 mA 10-1 1 10 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) 1/18/00 200015A WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Package Dimensions (Through Hole) PIN 1 ID. Package Dimensions (Surface Mount) PIN 1 ID. 0.354 (9.00) TYP 0.354 (9.00) TYP SEATING PLANE SEATING PLANE 0.350 (8.90) MAX 0.070 (1.78) 0.045 (1.14) 0.350 (8.90) MAX 0.070 (1.78) 0.045 (1.14) 0.496 [12.60] 0.200 (5.08) 0.115 (2.92) 0.020 [0.51] 0.200 (5.08) 0.115 (2.92) 0.154 (3.90) 0.120 (3.05) 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.400 (10.16) TYP 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) NOTE All dimensions are in inches (millimeters) Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7352417 www.qtopto.com 1/18/00 200015A
CNW85
1. 物料型号: - CNW82 - CNW83 - CNW84 - CNW85

2. 器件简介: - 这些光耦由一个GaAs红外发光二极管和与NPN光电晶体管光耦合组成。CNW82和CNW84没有连接基极,以提高抗噪声能力。

3. 引脚分配: - CNW82/84: PIN1为AH,PIN6为NO CONNECTION(无连接)。 - CNW83/85: PIN1为AH,PIN6为AH。

4. 参数特性: - 封装:宽体DIL封装,引脚间距为10.16mm。 - 爬电距离:最小10mm。 - 绝缘:AC和DC绝缘度高(5900V(RMS)和8340V(DC))。 - 发射极与检测极之间的最小隔离厚度:2mm(仅CNW84/85)。 - 外部间隙:最小9.6mm,外部爬电距离:最小10mm。

5. 功能详解: - 适用于与TTL集成电路一起使用的高电流传递比和低饱和电压。 - 具有高隔离度,适合在高压环境下工作。

6. 应用信息: - 这些光耦适用于需要电气隔离的应用,如工业控制系统、电源管理、数据通信等。

7. 封装信息: - 提供了通孔和表面贴装两种封装尺寸的图纸。
CNW85 价格&库存

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