FM25C160

AEC Q100 Grade 1 Compliant FM25C160 – Automotive Temp. 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 15 MHz maximum Bus Frequency • Direct hardware replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • 10 µA Standby Current Industry Standard Configuration • Automotive Temperature -40° C to +125° C o Qualified to AEC Q100 Specification • “Green”/RoHS 8-pin SOIC Description The FM25C160 is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25C160 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25C160 is capable of supporting up to 1012 read/write cycles -- far more than most systems will require from a serial memory. These capabilities make the FM25C160 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding automotive controls where the long write time of EEPROM can cause data loss. The FM25C160 provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25C160 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. The specifications are guaranteed over an automotive temperature range of -40°C to +125°C. Pin Configuration CS SO WP VSS 1 2 3 4 8 7 6 5 VDD HOLD SCK SI Pin Name /CS /WP /HOLD SCK SI SO VDD VSS Function Chip Select Write Protect Hold Serial Clock Serial Data Input Serial Data Output 5V Ground Ordering Information FM25C160-GA “Green” 8-pin SOIC, Automotive Grade 1 This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Rev. 3.1 July 2007 Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Page 1 of 13 FM25C160 - Automotive Temp. WP CS HOLD SCK Instruction Decode Clock Generator Control Logic Write Protect 512 x 32 FRAM Array Instruction Register Address Register Counter SI 11 8 Data I/O Register 3 Nonvolatile Status Register SO Figure 1. Block Diagram Pin Description Pin Name /CS I/O Input Pin Description Chip Select: This active low input activates the device. When high, the device enters low-power standby mode, ignores other inputs, and all outputs are tri-stated. When low, the device internally activates the SCK signal. A falling edge on /CS must occur prior to every op-code. Serial Clock: All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge and outputs occur on the falling edge. Since the device is static, the clock frequency may be any value between 0 and 15 MHz and may be interrupted at any time. Hold: The /HOLD pin is used when the host CPU must interrupt a memory operation for another task. When /HOLD is low, the current operation is suspended. The device ignores any transition on SCK or /CS. All transitions on /HOLD must occur while SCK is low. Write Protect: This active low pin prevents write operations to the status register. This is critical since other write protection features are controlled through the status register. A complete explanation of write protection is provided on page 6. *Note that the function of /WP is different from the FM25160. Serial Input: All data is input to the device on this pin. The pin is sampled on the rising edge of SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications. * SI may be connected to SO for a single pin data interface. Serial Output. SO is the data output pin. It is driven actively during a read and remains tri-state at all other times including when /HOLD is low. Data transitions are driven on the falling edge of the serial clock. * SO may be connected to SI for a single pin data interface. Supply Voltage. 5V Ground SCK Input /HOLD Input /WP Input SI Input SO Output VDD VSS Supply Supply Rev. 3.1 July 2007 Page 2 of 13 FM25C160 - Automotive Temp. Overview The FM25C160 is a serial FRAM memory. The memory array is logically organized as 2,048 x 8 and is accessed using an industry standard Serial Peripheral Interface or SPI bus. Functional operation of the FRAM is similar to serial EEPROMs. The major difference between the FM25C160 and a serial EEPROM with the same pin-out relates to its superior write performance. It also differs from Ramtron’s 25160 by supporting SPI mode 3 and the industry standard 16-bit addressing protocol. This makes the FM25C160 a drop-in replacement for most 16Kb SPI EEPROMs that support modes 0 & 3. Serial Peripheral Interface – SPI Bus The FM25C160 employs a Serial Peripheral Interface (SPI) bus. It is specified to operate at speeds up to 15 MHz. This high-speed serial bus provides high performance serial communication to a host microcontroller. Many common microcontrollers have hardware SPI ports allowing a direct interface. It is quite simple to emulate the port using ordinary port pins for microcontrollers that do not. The FM25C160 operates in SPI Mode 0 and 3. The SPI interface uses a total of four pins: clock, data-in, data-out, and chip select. A typical system configuration uses one or more FM25C160 devices with a microcontroller that has a dedicated SPI port, as Figure 2 illustrates. Note that the clock, data-in, and data-out pins are common among all devices. The Chip Select and Hold pins must be driven separately for each FM25C160 device. For a microcontroller that has no dedicated SPI bus, a general purpose port may be used. To reduce hardware resources on the controller, it is possible to connect the two data pins (SI, SO) together and tie off (high) the Hold pin. Figure 3 shows a configuration that uses only three pins. Protocol Overview The SPI interface is a synchronous serial interface using clock and data lines. It is intended to support multiple devices on the bus. Each device is activated using a chip select. Once chip select is activated by the bus master, the FM25C160 will begin monitoring the clock and data lines. The relationship between the falling edge of /CS, the clock and data is dictated by the SPI mode. The device will make a determination of the SPI mode on the falling edge of each chip select. While there are four such modes, the FM25C160 supports modes 0 and 3. Figure 4 shows the required signal relationships for modes 0 and 3. For both modes, data is clocked into the FM25C160 on the rising edge of SCK and data is expected on the first rising edge after /CS goes active. If the clock begins from a high state, it will fall prior to beginning data transfer in order to create the first rising edge. The SPI protocol is controlled by op-codes. These op-codes specify the commands to the part. After /CS is activated the first byte transferred from the bus master is the op-code. Following the op-code, any addresses and data are then transferred. Note that the WREN and WRDI op-codes are commands with no subsequent data transfer. Important: The /CS pin must go inactive after an operation is complete and before a new op-code can be issued. There is one valid op-code only per active chip select. Page 3 of 13 Memory Architecture When accessing the FM25C160, the user addresses 2,048 locations each with 8 data bits. These data bits are shifted serially. The addresses are accessed using the SPI protocol, which includes a chip select (to permit multiple devices on the bus), an op-code and a two-byte address. The upper 5 bits of the address range are ‘don’t care’ values. The complete address of 11-bits specifies each byte address uniquely. Most functions of the FM25C160 either are controlled by the SPI interface or are handled automatically by on-board circuitry. The access time for memory operation essentially is zero, beyond the time needed for the serial protocol. That is, the memory is read or written at the speed of the SPI bus. Unlike an EEPROM, it is not necessary to poll the device for a ready condition since writes occur at bus speed. That is, by the time a new bus transaction can be shifted into the part, a write operation will be complete. This is explained in more detail in the interface section below. Users expect several obvious system benefits from the FM25C160 due to its fast write cycle and high endurance as compared with EEPROM. However there are less obvious benefits as well. For example in a high noise environment, the fast-write operation is less susceptible to corruption than an EEPROM since it is completed quickly. By contrast, an EEPROM requiring milliseconds to write is vulnerable to noise during much of the cycle. Note: The FM25C160 contains no power management circuits other than a simple internal power-on reset. It is the user’s responsibility to ensure that VDD is within data sheet tolerances to prevent incorrect operation. It is recommended that the part is not powered down with chip enable active. Rev. 3.1 July 2007 FM25C160 - Automotive Temp. Figure 2. System Configuration with SPI port Figure 3. System Configuration without SPI port SPI Mode 0: CPOL=0, CPHA=0 7 6 5 4 3 2 1 0 SPI Mode 3: CPOL=1, CPHA=1 7 6 5 4 3 2 1 0 Figure 4. SPI Modes 0 & 3 Rev. 3.1 July 2007 Page 4 of 13 FM25C160 - Automotive Temp. Data Transfer All data transfers to and from the FM25C160 occur in 8-bit groups. They are synchronized to the clock signal (SCK) and they transfer most significant bit (MSB) first. Serial inputs are clocked in on the rising edge of SCK. Outputs are driven on the falling edge of SCK. Command Structure There are six commands called op-codes that can be issued by the bus master to the FM25C160. They are listed in the table below. These op-codes control the functions performed by the memory. They can be divided into three categories. First, are commands that have no subsequent operations. They perform a single function such as to enable a write operation. Second are commands followed by one byte, either in or out. They operate on the status register. Last are commands for memory transactions followed by address and one or more bytes of data. Table 1. Op-code Commands Name Description WREN WRDI RDSR WRSR READ WRITE Set Write Enable Latch Write Disable Read Status Register Write Status Register Read Memory Data Write Memory Data WREN - Set Write Enable Latch The FM25C160 will power up with writes disabled. The WREN command must be issued prior to any write operation. Sending the WREN op-code will allow the user to issue subsequent op-codes for write operations. These include writing the status register and writing the memory. Sending the WREN op-code causes the internal Write Enable Latch to be set. A flag bit in the status register, called WEL, indicates the state of the latch. WEL=1 indicates that writes are permitted. A write to the status register has no effect on the WEL bit. Completing any write operation will automatically clear the write-enable latch and prevent further writes without another WREN command. Figure 5 below illustrates the WREN command bus configuration. WRDI - Write Disable The WRDI command disables all write activity by clearing the Write Enable Latch. The user can verify that writes are disabled by reading the WEL bit in the status register and verifying that WEL=0. Figure 6 illustrates the WRDI command bus configuration. Op-code value 0000_0110b 0000_0100b 0000_0101b 0000_0001b 0000_0011b 0000_0010b Figure 5. WREN Bus Configuration Figure 6. WRDI Bus Configuration Rev. 3.1 July 2007 Page 5 of 13 FM25C160 - Automotive Temp. RDSR - Read Status Register The RDSR command allows the bus master to verify the contents of the Status register. Reading Status provides information about the current state of the write protection features. Following the RDSR opcode, the FM25C160 will return one byte with the contents of the Status register. The Status register is described in detail in a later section. WRSR – Write Status Register The WRSR command allows the user to select certain write protection features by writing a byte to the Status register. Prior to issuing a WRSR command, the /WP pin must be high or inactive. Note that on the FM25C160, /WP only prevents writing to the Status register, not the memory array. Prior to sending the WRSR command, the user must send a WREN command to enable writes. Note that executing a WRSR command is a write operation and therefore clears the Write Enable Latch. The bus timing for RDSR and WRSR are shown below. Figure 7. RDSR Bus Timing Figure 8. WRSR Bus Timing Status Register & Write Protection The write protection features of the FM25C160 are multi-tiered. First, a WREN op-code must be issued prior to any write operation. Assuming that writes are enabled using WREN, writes to memory are controlled by the Status register. As described above, writes to the status register are performed using the WRSR command and subject to the /WP pin. The Status register is organized as follows. Table 2. Status Register Bit Name 7 WPEN 6 0 5 0 4 0 3 BP1 2 BP0 1 WEL 0 0 are nonvolatile (shaded yellow). The WEL flag indicates the state of the Write Enable Latch. This bit is internally set by the WREN command and is cleared by terminating a write cycle (/CS high) or by using the WRDI command. BP1 and BP0 are memory block write protection bits. They specify portions of memory that are write protected as shown in the following table. Table 3. Block Memory Write Protection BP1 BP0 Protected Address Range 0 0 None 0 1 600h to 7FFh (upper ¼) 1 0 400h to 7FFh (upper ½) 1 1 000h to 7FFh (all) Bits 0 and 4-6 are fixed at 0 and cannot be modified. Note that bit 0 (/RDY in EEPROMs) is wired low since FRAM writes have no delay and the memory is never busy. All EEPROMs use Ready to indicate whether a write cycle is complete or not. The WPEN, BP1 and BP0 control write protection features. They Rev. 3.1 July 2007 Page 6 of 13 FM25C160 - Automotive Temp. The BP1 and BP0 bits and the Write Enable Latch are the only mechanisms that protect the memory from writes. The remaining write protection features protect inadvertent changes to the block protect bits. The WPEN bit controls the effect of the hardware /WP pin. When WPEN is low, the /WP pin is ignored. When WPEN is high, the /WP pin controls write access to the status register. Thus the Status register is write protected if WPEN=1 and /WP=0. This scheme provides a write protection mechanism, which can prevent software from writing the memory under any circumstances. This occurs if the BP1 and BP0 are set to 1, the WPEN bit is set to 1, and /WP is set to 0. This occurs because the block protect bits prevent writing memory and the /WP signal in hardware prevents altering the block protect bits (if WPEN is high). Therefore in this condition, hardware must be involved in allowing a write operation. The following table summarizes the write protection conditions. Table 4. Write Protection WEL WPEN /WP 0 X X 1 0 X 1 1 0 1 1 1 Protected Blocks Protected Protected Protected Protected Unprotected Blocks Protected Unprotected Unprotected Unprotected Status Register Protected Unprotected Protected Unprotected Memory Operation The SPI interface, with its relatively high maximum clock frequency, highlights the fast write capability of the FRAM technology. Unlike SPI-bus EEPROMs, the FM25C160 can perform sequential writes at bus speed. No page register is needed and any number of sequential writes may be performed. Write Operation All writes to the memory array begin with a WREN op-code. The next op-code is the WRITE instruction. This op-code is followed by a two-byte address value. The upper 5-bits of the address are don’t care. In total, the 11-bits specify the address of the first byte of the write operation. Subsequent bytes are data and they are written sequentially. Addresses are incremented internally as long as the bus master continues to issue clocks. If the last address of 7FFh is reached, the counter will roll over to 0000h. Data is written MSB first. Unlike EEPROMs, any number of bytes can be written sequentially and each byte is written to memory immediately after it is clocked in (after the 8th clock). The rising edge of /CS terminates a WRITE op-code operation. Read Operation After the falling edge of /CS, the bus master can issue a READ op-code. Following this instruction is a twobyte address value. The upper 5-bits of the address are don’t care. In total, the 11-bits specify the address of the first byte of the read operation. After the opcode and address are complete, the SI line is ignored. The bus master issues 8 clocks, with one bit read out for each. Addresses are incremented internally as long as the bus master continues to issue clocks. If the last address of 7FFh is reached, the counter will roll over to 0000h. Data is read MSB first. The rising edge of /CS terminates a READ op-code operation. The bus configuration for read and write operations is shown below. Hold The /HOLD pin can be used to interrupt a serial operation without aborting it. If the bus master takes the /HOLD pin low while SCK is low, the current operation will pause. Taking the /HOLD pin high while SCK is low will resume an operation. The transitions of /HOLD must occur while SCK is low, but the SCK pin can toggle during a hold state. Rev. 3.1 July 2007 Page 7 of 13 FM25C160 - Automotive Temp. Figure 9. Memory Write Figure 10. Memory Read Endurance Internally, a FRAM operates with a read and restore mechanism similar to a DRAM. Therefore, endurance cycles are applied for each access: read or write. The FRAM architecture is based on an array of rows and columns. Each access causes an endurance cycle for an entire row. Therefore, data locations targeted for substantially differing numbers of cycles should not be located within the same row. In the FM25C160, there are 512 rows each 32 bits wide. Regardless, FRAM read and write endurance is effectively unlimited at the 15 MHz clock speed. Even at 2000 accesses per second to the same row, 15 years time will elapse before 1012 endurance cycles occur. Rev. 3.1 July 2007 Page 8 of 13 FM25C160 - Automotive Temp. Electrical Specifications Absolute Maximum Ratings Symbol Description VDD Power Supply Voltage with respect to VSS VIN Voltage on any pin with respect to VSS TSTG TLEAD VESD Storage Temperature Lead Temperature (Soldering, 10 seconds) Electrostatic Discharge Voltage - Human Body Model (JEDEC Std JESD22-A114-B) - Charged Device Model (JEDEC Std JESD22-C101-A) - Machine Model (JEDEC Std JESD22-A115-A) Package Moisture Sensitivity Level Ratings -1.0V to +7.0V -1.0V to +7.0V and VIN < VDD+1.0V -55°C to + 125°C 300° C 4kV 1kV 400V MSL-1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40° C to + 125° C, VDD = 4.5V to 5.5V unless otherwise specified) Symbol Parameter Min Typ Max Units VDD Power Supply Voltage 4.5 5.0 5.5 V IDD VDD Supply Current mA 0.5 @ SCK = 1.0 MHz mA 6.5 @ SCK = 15.0 MHz ISB Standby Current 10 @ 85°C µA 30 @ 125°C µA ILI Input Leakage Current ±1 µA ILO Output Leakage Current ±1 µA VIL Input Low Voltage -0.3 0.25 VDD V VIH Input High Voltage 0.75 VDD VDD + 0.3 V VOL Output Low Voltage 0.4 V @ IOL = 2 mA VDD – 0.8 VOH Output High Voltage V @ IOH = -2 mA VHYS Input Hysteresis 0.05 VDD V Notes 1. SCK toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V. 2. SCK = SI = /CS=VDD. All inputs VSS or VDD. 3. VIN or VOUT = VSS to VDD. 4. This parameter is characterized but not 100% tested. Applies only to /CS and SCK pins. Notes 1 2 3 3 4 Rev. 3.1 July 2007 Page 9 of 13 FM25C160 - Automotive Temp. AC Parameters (TA = -40° C to +125° C, VDD = 4.5V to 5.5V unless otherwise specified) Min Max Symbol Parameter fCK SCK Clock Frequency 0 15 tCH Clock High Time 30 tCL Clock Low Time 30 tCSU Chip Select Setup 10 tCSH Chip Select Hold 10 tOD Output Disable 25 tODV Output Data Valid 25 tOH Output Hold 0 tD Deselect Time 80 tR Data In Rise Time 50 tF Data In Fall Time 50 tSU Data Setup Time 5 tH Data Hold Time 5 tHS /Hold Setup Time 10 tHH /Hold Hold Time 10 tHZ /Hold Low to Hi-Z 25 tLZ /Hold High to Data Active 20 Notes 1. 2. 3. tCH + tCL = 1/fCK. This parameter is characterized and not 100% tested. Rise and fall times measured between 10% and 90% of waveform. Units MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 1 1 2 2,3 2,3 2 2 Capacitance (TA = 25° C, f=1.0 MHz, VDD = 5V) Symbol Parameter CO Output Capacitance (SO) CI Input Capacitance Notes 1. This parameter is characterized and not 100% tested. Min - Max 8 6 Units pF pF Notes 1 1 AC Test Conditions Input Pulse Levels Input rise and fall times Input and output timing levels Output Load Capacitance 10% and 90% of VDD 5 ns 0.5 VDD 30 pF Rev. 3.1 July 2007 Page 10 of 13 FM25C160 - Automotive Temp. Serial Data Bus Timing tD tCSH tF tCSU tH 1/fCK tR tCL tCH tSU tODV tOH tOD /Hold Timing Data Retention (VDD = 4.5V to 5.5V) Parameter Min Max Units Notes Data Retention 17 Years @ TA = 55°C (average) 9000 Hours @ TA = 125°C Note: The device is guaranteed to retain data after both conditions have been applied : (1) 17 yrs at an average temperature of 55°C and (2) 9000 hrs at 125°C. Typical Grade 1 Operating Profile 1600 1400 1200 1000 800 600 400 200 0 70 75 80 85 90 95 100 105 110 115 120 125 Typical Grade 1 Storage Profile 25000 20000 Hours 15000 10000 5000 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 Temperature (°C) Hours Temperature (°C) Rev. 3.1 July 2007 Page 11 of 13 FM25C160 - Automotive Temp. Mechanical Drawing 8-pin SOIC (JEDEC MS-012, Variation AA) Recommended PCB Footprint 7.70 3.90 ±0.10 6.00 ±0.20 2.00 3.70 Pin 1 1.27 0.65 4.90 ±0.10 1.35 1.75 0.25 0.50 45 ° 0.19 0.25 1.27 0.33 0.51 0.10 0.25 0.10 mm 0°- 8° 0.40 1.27 Refer to JEDEC MS-012 for complete dimensions and notes. All dimensions in millimeters. SOIC Package Marking Scheme Legend: XXXX= part number, P= package type, T= temp (A= Automotive, blank=ind.) LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week Example: FM25C160, “Green” SOIC package, Automotive, Lot 60018, Year 2006, Work Week 38 FM25C160GA A60018G RIC0638 XXXXXXX-PT LLLLLLL RICYYWW Rev. 3.1 July 2007 Page 12 of 13 FM25C160 - Automotive Temp. Revision History Revision 2.0 2.1 2.2 3.0 3.1 Date 3/24/06 6/22/06 10/12/06 1/30/07 7/12/07 Summary Created automotive temperature spec. Changed VIH/VIL spec limits. Added comment to Note 4 in DC Table. Updated Data Retention table and added typical operating/storage profiles. Changed to Production status. Passed AEC Q100 testing. Added ESD Machine Model rating. Changed to Production status. Changed Data Retention table. Rev. 3.1 July 2007 Page 13 of 13