RMPA1951-102

RMPA1951-102 3V PCS CDMA Power Amplifier Module Description ADVANCED INFORMATION The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process. Features K K K K K Advanced DC power-management extends average phone-battery life! Single positive-supply operation and power-down mode. 35% power-added efficiency at +29 dBm CDMA average output power. Compact LCC package: 6.0 x 6.0 x 1.5 mm3. 50 ohm matched and DC blocked input/output. Absolute Maximum Ratings1 Parameter Supply Voltage Reference Voltage RF Input Power2 Load VSWR Case Operating Temperature Storage Temperature Symbol Vcc Vref Pin VSWR Tc Tstg Min 1.5 Typical 3.5 2.7 +1 1.2:1 +25 +25 Max 6 4.0 +7 10:1 +110 +150 Units V V dBm °C °C -40 -55 Electrical Characteristics3 Parameter Operating Frequency Gain (Po=0 dBm) (Po=28 dBm) Linear Output Power Power-Added Efficiency (Po=16 dBm) (Po=28 dBm) (Po=29 dBm) ACPR (Offset ≥ 1.25 MHz)4 Noise Figure Noise Power (Po ≤ 29 dBm) Input VSWR (50Ω) Output VSWR (50Ω) Min 1850 20 25 29 5 28 31 Typ Max 1910 Unit MHz dB dB dBm Parameter Stability (All spurious) Harmonics (Po ≤ 29 dBm) 2fo, 3fo, 4fo Quiescent Current (Vref=2.7V) (Vref=2.0V) (Vref=1.7V) Power Shutdown Current6 Vcc Vref Iref Case Operating Temperature 5 Min Typ Max -70 -30 Unit dBc dBc mA mA mA uA V V mA °C 24 27 6.5 32 35 -49 5 2.0:1 3.5:1 % % % -46 dBc 6 dB -135 dBm/Hz 2.5:1 3.0 1.7 80 50 35 2 3.5 2.7 13 100 10 4.5 3.2 -30 +85 Notes: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. 2. Typical RF input power for CDMA Pout = +28 dBm. 3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR ≤ 1.2:1. 4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a 1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset. 5. Load VSWR ≤ 6:1, all phase angles. 6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 1 Package Outline and Pin Designations Dimensions in inches (mm) Pin # Description ADVANCED INFORMATION 1 2 3 4 5 6 7 Vcc RF In VREF N/C RF Out GND GND (2.54) (2.46) (5.08) (4.82) Figure 2 Functional Block Diagram of Packaged Product (Topside View) PA Module Collector Bias GND (6) VCC (1) VCC=3.5V (nom) VREF=2.7V (nom) 1850-1910 MHz 50 Ohms I/O RF IN (2) Input Matching Network Input Stage Interstage Match Output Stage Output Matching Network RF OUT (5) MMIC Input Stage Bias Output Stage Bias VREF (3) Reference Adjust GND (Pin 7)(Package Base) N/C (4) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Evaluation Board Instructions ADVANCED INFORMATION With device marking oriented right side up, RF IN is on the left and RF OUT is on the right. Blue wire is collector DC voltage input (pin 1). VCC= +3.5V nominal. Brown wire is reference DC voltage input (pin 3). Vref=+ 2.7V nominal to obtain Iccq= 80mA. Operation at lower or higher quiescent currents can be achieved by decreasing or increasing Vref voltage relative to +2.7V. First apply +3.5V to the collector supply (blue wire). Next apply +2.7V to the reference supply to brown wire. Quiescent collector current with no RF applied will be about 80 mA. Reference supply current with or without RF applied will be about 13 mA. When turning amplifier off, reverse power supply sequence. Apply -20dBm RF input power at PCS frequency (1850 -1910MHz). After making any initial small signal measurements at this drive level, input power may be increased up to a maximum of +6dBm for large signal, single-tone or digital CDMA measurements. Do not exceed +6dBm input power. Figure 3 Evaluation Board Layout and Schematic Vcc: +3.5V Icc: ≅ 80mA BLUE WIRE GND G656524 V1 VCC PCB Specifications: Material: Rogers RO4003 Dimensions: 2.0”x1.5”x0.032” Metallization: 1/2 OZ Copper Cladding RMPA1951 - 102 PPYYWWXX (ALT)PPYYWWZZZ Raytheon RF IN Vref: +2.7V Ibb: ≅ 13 ma BROWN WIRE RF IN VREF RF OUT N/C GND RF OUT C1 * 2.2 uF VCC SMA1 RF IN 50 ohm TRL GND 50 ohm TRL SMA2 RF OUT N/C (package base) 1 2 3 6 Raytheon RMPA1951 PPYYWWZZZ 7 5 4 VREF * Minimum VCC bypass capacitance recommended for best RF performance. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Application Information ADVANCED INFORMATION CAUTION: THIS IS AN ESD SENSITIVE DEVICE. K Precautions to Avoid Permanent Device Damage: – Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. – Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. – Static Sensitivity: Follow ESD precautions to protect against ESD damage: • A properly grounded static-dissipative surface on which to place devices. • Static-dissipative floor or mat. • A properly grounded conductive wrist strap for each person to wear while handling devices. – General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. – Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. K Device Usage: Raytheon recommends the following procedures prior to assembly. – Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. – Assemble the dry-baked devices within 7 days of removal from the oven. – During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C – If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. K Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. – Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2°C/sec. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150°C. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220°C, with a maximum limit of 225°C. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. K Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. K Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 4 Recommended Solder Reflow Profile 240 220 200 180 160 Deg C 140 120 100 80 60 40 20 0 0 60 120 T im e (Sec) 180 240 300 1 C /S ec o ADVANCED INFORMATION 10 S ec 183 o C S oak at 150 o C for 60 S ec 45 S ec (M ax) above 183 o C 1 o C /S ec Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Performance Data Figure 5 45.0 ADVANCED INFORMATION Single-Tone Output Power, Gain and Power-Added Efficiency Pow er (dBm ), Gain (dB), Efficiency (%) Output Power Power Gain 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 -15.0 Power-Added Efficiency Tested at: K Vcc=3.5V K Vref=2.7V K f=1880 MHz K Tc=+25°C -12.5 -10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0 7.5 Input P o we r (dB m) Figure 6 CMDA Gain vs Output Power 30.00 Tc= +25 deg C 27.50 Tc= -30 deg C Tc= +85 deg C 25.00 22.50 20.00 Tested at: K Vcc=3.5V K Vref=2.7V K f=1880 MHz K Pout < 29 dBm Gain (dB) 17.50 15.00 0.00 5.00 10.00 15.00 Output Power (dBm) 20.00 25.00 30.00 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Page 6 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 7 ACPR vs Frequency (3 Devices) -47.50 -48.00 -48.50 ACPR1 (dBc) -49.00 -49.50 -50.00 -50.50 -51.00 -51.50 1840 ADVANCED INFORMATION ACPR1_28_1 ACPR1_28_2 ACPR1_28_3 Tested at: KVcc=3.5V KVref=2.7V KPout=+28 dBm KOffset= ±1.25 MHz KTc=+25°C 1850 1860 1870 1880 1890 1900 1910 1920 Frequency (MHz) Figure 8 ACPR vs Output Power and Temperature -40.00 -45.00 -50.00 ACPR1 (dBc) -55.00 -60.00 -65.00 -70.00 -75.00 0.00 Tc=+25 deg C Tc=-30 deg C Tc=+85 deg C Tested at: K Vcc=3.5V K Vref=2.7V K f=1880 MHz K Offset= ±1.25 MHz K Pout < 28 dBm 5.00 10.00 15.00 20.00 25.00 30.00 Output Power (dBm) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Page 7 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 9 40.00 35.00 30.00 Efficiency (%) 25.00 20.00 15.00 10.00 5.00 0.00 0.00 ADVANCED INFORMATION PAE vs Output Power and Temperature Tc= +25 deg C Tc=-30 deg C Tc=+85 deg C Tested at: K Vcc=3.5V K Vref=2.7V K F=1880 MHz 5.00 10.00 15.00 Output Power (dBm) 20.00 25.00 30.00 Figure 10 DC Collector Current vs Output Power and Reference Voltage 700 600 Collector Current, Icc (mA) 500 Pout=+4 dBm Pout=+16 dBm Pout=+24 dBm Pout=+28 dBm Pout=+29 dBm 400 300 200 Tested at: K Vcc=3.5V K Vref=2.65 –3.05V K F=1880 MHz K Tc = +25°C 100 0 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 Reference Voltage, Vref (V) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Page 8 RMPA1951-102 3V PCS CDMA Power Amplifier Module DC Power Management for Reduced-Power Operating Modes ADVANCED INFORMATION Many Cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter performance while operating at backed-off output power levels. Oftentimes, cellular systems will operate at 10-20 dB back-off from maximum-rated linear power and peak power-added efficiency. The ability to reduce current consumption under these conditions, without sacrificing linearity, is critical to extending battery life in nextgeneration handheld phones. The RMPA1951-102 PA offers the ability to lower quiescent current by more than 60 percent and small-signal gain by up to 10 dB using a single control voltage (Vref). Even with the amplifier biased for lowest current consumption, high linearity is maintained over the full operating temperature range and at output power levels up to +16 dBm. Bias and gain control through Vref provides complete flexibility for the handset designer, allowing the user to define the operation by either an analog (continuously-variable) or digital (discrete-step) voltage input. As an example, reducing the Vref voltage from 2.7V (nominal) to 1.7V (minimum) can lower PA current consumption by more than 20 percent at an output power of +16 dBm. The following charts demonstrate analog and digital control techniques for minimizing DC power consumption at reduced RF output power levels. Figures 11 through 19 characterize analog control over a reference voltage (Vref) range of 1.7V to 2.7V. Quiescent current is reduced to less than 30 mA and small-signal gain is reduced by 10 dB at Vref=1.7V. Operating current at +16 dBm is also reduced by 20 percent, or 35 mA, at the lowest reference voltage. Figures 20 through 23 feature digital control using three discrete voltage levels (2.7V, 2.0V, 1.7V) to optimize linear PA performance over three output power ranges (< +4 dBm, +4 dBm to +16 dBm, >+16 dBm). Alternate output power ranges can be selected depending on the power-probability use in the cellular system. DC Power Management Application of Digital Control Technique Parameter Low-Power Range Current Gain Linearity Mid-Power Range Current Gain Linearity High-Power Range Current Gain Linearity Symbol P04 Icc4 G4 ACPR4 P16 Icc16 G16 ACPR16 P28 Icc28 G28 ACPR28 Min Typical Max +4 55 Units dBm mA dB dBc dBm mA dB dBc dBm mA dB dBc Conditions Vref=1.7V typ 12.5 -50 +4 +10 20 -50 +16 560 26 -50 +28 640 +16 160 Vref=2.0V typ Vref=2.7V typ Pout=+28 dBm Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Page 9 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 11 Enhanced PAE vs Reference Voltage at Pout=+16 dBm (Analog Control) 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 2.7 2.6 2.5 2.4 2.3 2.2 Vref (V) 2.1 2.0 1.9 1.8 1.7 Power-Added Efficiency (%) ADVANCED INFORMATION PAE (+16 dBm) Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Figure 12 Total Quiescent Current vs Reference Voltage (Analog Control) 100.0 90.0 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 2.7 2.6 2.5 2.4 2.3 2.2 Vref (V) 2.1 2.0 1.9 1.8 1.7 DC Current (mA) Iccq+Iref Tested at: K Vcc=3.5V K Tc = +25°C Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 10 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 13 Small-Signal Gain (Pout=0 dBm) vs Reference Voltage (Analog Control) 27.5 ADVANCED INFORMATION SS gain 25.0 22.5 20.0 17.5 15.0 12.5 10.0 2.7 2.6 2.5 2.4 2.3 2.2 Vref (V) 2.1 2.0 1.9 1.8 1.7 Small-Signal Gain (dB) Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Figure 14 Total Current (ICC + Iref) vs Output Power and Reference Voltage (Analog Control) 185.0 175.0 165.0 155.0 145.0 135.0 125.0 115.0 105.0 95.0 85.0 75.0 65.0 55.0 45.0 35.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Vref=2.7V Icc+Iref (mA) Tested at: KVcc=3.5V KF=1880 MHz KTc = +25°C Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 11 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 15 Gain at +25°C vs Output Power and Reference Voltage (Analog Control) 27.5 25.0 22.5 Gain (dB) 20.0 17.5 15.0 12.5 10.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) ADVANCED INFORMATION Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Vref=2.7V Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Figure 16 Low-Power Mode Gain vs Output Power and Temperature (Analog Control) 22.5 Vref=2.0V (Tc=+25 deg C) Vref=2.0V Tc=+85 deg C) 20.0 Vref=1.7V (Tc=+25 deg C) Vref=1.7V (Tc=+85 deg C) G ain (dB) 17.5 15.0 Tested at: K Vcc=3.5V K F=1880 MHz 12.5 10.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 12 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 17 -45.0 -46.0 ACPR1 at +/-1.25 MHz Offset (dBc) -47.0 -48.0 -49.0 -50.0 -51.0 -52.0 -53.0 -54.0 -55.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) ADVANCED INFORMATION Low-Power Mode - ACPR at +25°C vs Output Power and Vref (Analog Control) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Figure 18 Low-Power Mode - ACPR vs Output Power and Vref at 85°C (Analog Control) -45.0 -46.0 ACPR1 at +/-1.25 MHz Offset (dBc) -47.0 -48.0 -49.0 -50.0 -51.0 -52.0 -53.0 -54.0 -55.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +85°C Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 13 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 19 -45.0 -46.0 ACPR1 at +/- 1.25 MHz Offset (dBc) -47.0 -48.0 -49.0 -50.0 -51.0 -52.0 -53.0 -54.0 -55.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Output Power (dBm) ADVANCED INFORMATION Low-Power Mode - ACPR vs Output Power and Temperature (Analog Control) Tc=+25 deg C Tc=+85 deg C Tested at: K Vcc=3.5V K Vref=2.0V K F=1880 MHz Vref=2.0V Figure 20 600 550 500 450 C ollector C urrent (m ) A 400 350 300 250 200 Collector Current vs Output Power at +25°C (Digital Control) Vref=2.7V Adj Vref (Low-Power) (Mid-Power) (High-Power) Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Vref=2.7V Vref=2.7V 150 100 50 0 -20.0 -16.0 -12.0 Vref=2.0V Vref=1.7V -8.0 -4.0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 Output Power (dBm) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 14 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 21 180 Vref=2.7V 160 Collector Current (mA) 140 120 100 80 60 40 20 0 -20.0 Adj Vref ADVANCED INFORMATION Collector Current vs Output Power (Pout ≤+16 dBm) at +25°C (Digital Control) (Low-Power) (Mid-Power) Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Vref=2.7V Vref=2.7V Vref=1.7V Vref=2.0V -16.0 -12.0 -8.0 -4.0 0.0 4.0 8.0 12.0 16.0 Output Power (dBm) Figure 22 Gain vs Output Power (Pout ≤+28 dBm) at +25°C (Digital Control) 30.0 27.5 25.0 22.5 20.0 Gain (dB) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 -20.0 -16.0 -12.0 -8.0 -4.0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 Vref=2.7V Adj Vref (Low-Power) (Mid-Power) (High-Power) Vref=2.7V Vref=2.7V Vref=2.0V Vref=1.7V Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C Output Power (dBm) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 15 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA1951-102 3V PCS CDMA Power Amplifier Module Figure 23 ADVANCED INFORMATION ACPR vs Output Power (Pout ≤+28 dBm) at +25°C (Digital Control) -45.00 -47.50 ACPR1 at +/-1.25 MHz Offset (dBc) -50.00 -52.50 -55.00 -57.50 -60.00 -62.50 -65.00 -67.50 -70.00 -72.50 -75.00 -20.0 -16.0 -12.0 -8.0 -4.0 0.0 4.0 8.0 12.0 Vref=2.7V Tested at: K Vcc=3.5V K F=1880 MHz K Tc = +25°C (Low-Power) (Mid-Power) (High-Power) Vref=2.7V Adj Vref Vref=1.7V Vref=2.0V Vref=2.7V 16.0 20.0 24.0 28.0 Output Power (dBm) Figure 24 Noise Figure vs Frequency (3 Devices) 7.00 6.50 6.00 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 1830 Unit 1_2.7V Unit 2_2.7V Unit 3_2.7V Tested at: K Vcc=3.5V K Vref = 2.7 K Tc = +25°C Noise Figure (dB) 1850 1870 1890 1910 1930 1950 1970 1990 2010 Frequency (MHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised August 27, 2001 Page 16 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives ADVANCED INFORMATION North America D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. 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Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it Asia ITX Corporation 2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig art.herbig@avnet.com Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. Huygensweg 17 2400 AJ ALPHEN AAN DEN RIJN The Netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com Spain C/Isobel Colbrand, 6 – 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com Worldwide Distribution United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com Sales Office Headquarters United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com Asia Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com Customer Support www.raytheon.com/micro 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com Characteristic performance data and specifications are subject to change without notice. Revised August 27, 2001 Page 17 Raytheon RF Components 362 Lowell Street Andover, MA 01810