R12P22005D

Features Unregulated Converters • • • • • • • • +20/-5V & +15/-3V asymmetric outputs for SiC driver applications Qualified with 65kV/µs @ Vcommon mode =1KV +15/-9V asymmetric outputs for IGBT driver applications Pot-core transformer with separated windings High 6.4kVDC isolation in compact SIP7 size Low isolation capacitance (10pF max.) Optional continuous short circuit protected IEC/EN/UL62368-1 certified DC/DC Converter RxxP2xxyy Description 2 Watt 3 SIP7 for SiC and IGBT Applications YEA R y arrant w High slew rate SiC transistor drivers require an isolated asymmetric supply of +20/-5V or +15/-3V with high isolation voltage and low isolation capacitance. The RxxP2xxyyD series have been specially designed to fulfill this demanding requirement with 6400VDC isolation and