1N4148W

SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON ECTRON SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 150mAmpere 1N4148W FEATURES * * * * * * Compact surface mount with same foot print as mini-melf High Breakdown Voltage Fast Switching Speed 400mW Power Dissipation General Purpose Switching Applications High Conductance SOD-123 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram .110(2.800) .102(2.600) .067(1.700) .059(1.500) .026(.650) .018(.450) .152(3.850) .140(3.550) .006(.150) .003(.080) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .049(1.250) .041(1.050) .004(.100) .000(0.00) REF .020(0.500) Dimensions in inches and (millimeters) MAXIMUM RAT INGS (@ TA=25 OC unless otherwise noted) RATINGS Non-Repetitive Peak Reverse Voltage Maximum R epetitive Peak R everse Voltage Maximum Working Peak reverse Voltage Maximum DC Blocking Voltage Maximum RMS V oltage Maximum Forward Comtinuous Current Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current Typical Reverse Recovery Time Typical Junction Capacitance M aximum P ower Dissipation Typical Thermal Resistance Operating and Storage Temperature Range SYMBOL VRM VRRM VRWM VR VRMS IFM IO @t=1.0uS @t=1.0S 1N4148W 100 75 53 300 150 2.0 1.0 UNITS Volts Volts Volts mAmps mAmps Amps nS pF mW O IFSM Trr CT PD R ΘJA TJ, TSTG 4 2 400 315 -65 to + 150 1N4148W 0.715 0.855 1.0 25 25 1.0 C/W O C E LECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted) SYMBOL CHARACTERISTICS Maximum Instantaneous Forward Voltage @IF=1.0mA @IF=10mA @IF=50mA @IF=150mA @VR=20V @VR=75V UNITS Volts VF Maximum I nstantaneous Reverse Current . IR n Amps uAmps 2006-3 RATING AND CHARACTERISTICS CURVES ( 1N4148W ) IF, INSTANTANEOUS FORWARD CURRENT(mA) 500 PD, POWER DISSIPATION (mW) 400 300 200 100 0 1000 100 10 1.0 0.1 .01 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE(V) 0 25 50 75 100 125 O 150 175 2 TA, AMBIENT TEMPERATURE( C) FIG.1 FORWARD DERATING CURVE 10,000 IR, LEAKAGE CURRENT (nA) FIG.2 FORWARD CHARACTERISTICS 1,000 100 10 1 0 100 TJ, JUNCTION TEMPERATURE( C) O 180 FIG.3 LEAKAGE CURRENT VS. JUNCTION TEMPERATURE R ECTRON