1N4448W

SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON ECTRON SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere 1N4448W FEATURES * Fast Switching Speed * Surface Mount Package ldeally Suited for Automatic Insertion * For General Purpose Switching Applicationgs * High Conductance SOD-123 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram .110(2.800) .102(2.600) .067(1.700) .059(1.500) .026(.650) .018(.450) .152(3.850) .140(3.550) .006(.150) .003(.080) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .049(1.250) .041(1.050) .004(.100) .000(0.00) REF .020(0.500) Dimensions in inches and (millimeters) MAXIMUM RAT INGS (@ TA=25 OC unless otherwise noted) RATINGS Non-Repetitive Peak Reverse Voltage Maximum R epetitive Peak R everse Voltage Maximum Working Peak reverse Voltage Maximum DC Blocking Voltage Maximum RMS V oltage Maximum Forward Comtinuous Current Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current Typical Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) M aximum P ower Dissipation (Note 3) Typical Thermal Resistance Operating and Storage Temperature Range SYMBOL VRM VRRM VRWM VR VRMS IFM IO @t=1.0uS @t=1.0S 1N4448W 100 75 53 500 250 4.0 2.0 UNITS Volts Volts Volts mAmps mAmps Amps nS pF mW O IFSM Trr CJ PD R ΘJA TJ, TSTG 4 4 400 315 -65 to + 150 1N4448W 0.715 0.855 1.0 25 25 2.5 C/W O C ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted) SYMBOL CHARACTERISTICS Maximum Instantaneous Forward Voltage @IF=1.0mA @IF=10mA @IF=50mA @IF=150mA @VR=20V @VR=75V UNITS Volts n Amps uAmps VF Maximum I nstantaneous Reverse Current IR . N OTES : 1. Measured at I F=I R=10mA, I RR=0.1I R A nd R L=100 . 2 . Measured at 1MHz and applied reverse voltage of 0 volts. 3 . Part mounted on FR-4 PC board with minimunm recommended pad layout. 2006-3 RATING AND CHARACTERISTICS CURVES ( 1N4448W ) 300 Pd, POWER DISSIPATION (mW) IF, FORWARD CURRENT (mA) 100 200 10 Ta=25OC Ta=50OC 100 1 Ta=85OC Ta=0OC Ta=30OC 0 0 25 50 0.1 75 100 O 125 150 0 200 400 600 800 1000 TA, AMBIENT TEMPERATURE ( C) VF, FORWARD VOLTAGE (mV) FIG.1 Power Derating Curve 10.0 FIG.2 Typicall Forward Chatacteristics IG.2 Typica Forward Chatacteristics 2.5 trr, REVERSE RECOVERY TIME(nS) 80 IR, LEAKAGE CURRENT (A) 1.0 Ta=100OC Ta=75OC 2.0 1.5 1.0 0.5 0 0.10 Ta=50OC Ta=25OC 0.01 Ta=-30 C O Ta=0 C O 0.001 0 20 40 60 0 2 4 6 8 10 VR, REVERSE VOLTAGE (V) IF, FORWARD CURRENT (mA) FIG.3 Typica Reverse Characteristics FIG.3 Typicall Reverse Characteristics 4 CT, TOTAL CAPCITANCE (pF) f=1 MHz FIG.4 Reverse Recovery Time vs Forward Current FIG.4 Reverse Recovery Time vs. Forward Current 3 2 1 0 0 1 2 3 4 5 6 IF, FORWARD CURRENT (mA) FIG.5 Tota Capacicance vs. Reverse Voltage FIG.5 Totall Capacicance vs Reverse Voltage R ECTRON