2SB709A

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) R ECTRON 2SB709A FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram BASE 1 EMITTER 2 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load ,derate current by 20%. O 0.019(2.00) 0.071(1.80) 1 3 2 0.118(3.00) 0.110(2.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Junction and Storage temperature o o SYMBOL VCBO VCEO VEBO IC TJ,Tstg VALUE -45 -45 -7 -200 -55-150 UNITS V V V mA O C ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -2mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -20V, IE=0) Emitter cut-off current (VCE= -10V, IB=0) DC current gain (VCE= -10V, IC= -2mA) Collector-emitter saturation voltage (IC= -100mA, IB= -10mA) Transition frequency (VCE= -10V, IC= -1mA, f= 200MHZ) Collector output capacitance (VCB= -10V, IE= 0, f= 1MHz) CLASSIFICATION OF hFE RANK Range Marking Q 160-260 BQ1 R 210-340 BR1 S 290-460 BS1 2006-3 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Cob MIN -45 -45 -7 160 60 MAX -0.1 -100 460 -0.5 2.7 UNITS V V V mA mA V MHz PF RATING AND CHARACTERISTICS CURVES ( 2SB709A) PC, COLLECTOR POWER DISSIPATION (mW) 240 IC, COLLECTOR CURRENT (mA) 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 TA= 25 C O IB= -300uA IB= -250uA IB= -200uA IB= -150uA IB= -100uA IB= -50uA -10 -12 TA, AMBIENT TMEPERATURE (OC) Figure1 PC-TA VCE, COLLECTOR TO EMITTER VOLTAGE(V) Figure2 IC-VCE -60 IC, COLLECTOR CURRENT (mA) -50 -40 -30 -20 -10 0 0 -150 -300 -400 VCE= 5V TA= 25 OC -350 IB, BASE CURRENT (uA) -450 -300 -250 -200 -150 -100 -50 0 0 -0.6 -1.2 -1.8 IB, BASE CURRENT (uA) Figure3 IC-IB VBE, BASE TO EMITTER VOLTAGE (V) Figure4 IB-VBE -240 IC, COLLECTOR CURRENT (uA) VCE= -5V -200 -160 -120 -80 -40 0 0 -0.4 TA= 75 C O 25OC -25 C O -0.8 -1.2 -1.6 -2.0 VBE, BASE TO EMITTER VOLTAGE (V) Figure5 IC-VBE R ECTRON RATING AND CHARACTERISTICS CURVES ( 2SB709A) -10 VCE(sat), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 0 20 40 60 80 100 120 140 160 25OC -25OC TA= 75 OC hFE, FORWARD CURRENT TRANSFER RATIO IC/IB=10 600 500 400 300 200 100 0 -1 -3 -10 -30 -100 TA= 75 OC 25OC -25OC VCE= -10V -300 -1000 IC, COLLECTOR CURRENT (mA) Figure6 VCE(sat)-IC IC, COLLECTOR CURRENT (mA) Figure7 hFE-IC Cob, COLLECTOR OUTPUT CAPACITANCE (pF) 160 fT, TRANSITION FREQUENCY (MHz) 140 120 100 80 60 40 20 0 -1 -3 -10 -30 -100 -300 -1000 VCE= -10V TA= 25 OC 8 7 6 5 4 3 2 1 0 -1 -3 -10 -30 IE= 0 f= 1MHz TA= 25 OC -100 IE, EMITTER CURRENT (mA) Figure8 fT-IE VCB, COLLECTOR TO BASE VOLTAGE (V) Figure9 Cob-VCB 6 5 NF, NOISE FIGURE (dB) 4 3 2 1 0 0.01 0.03 0.1 0.3 1 VCB= -5V f= 1KHz Rg= 2KW TA= 25 OC 3 10 IE, EMITTER CURRENT (mA) Figure10 NF-IE R ECTRON RATING AND CHARACTERISTICS CURVES ( 2SB709A) 20 18 NF, NOISE FIGURE (dB) 16 14 12 10 8 6 4 2 0 0.1 0.3 1 3 10 1 0.1 0.3 1KHz 10KHz VCB= -5V Rg= 50KW TA= 25 OC f= 100Hz 300 100 h PARAMETER 30 10 3 hje (KW) hre (x10-4) hfe hoe (uS) VCE= -5V f= 270Hz TA= 25 OC 1 IE, EMITTER CURRENT (V) 3 10 IE, EMITTER CURRENT (A) Figure11 NF-IE Figure12 h PARAMETER-IE IE= 2mA f= 270Hz TA= 25 OC 300 hfe 100 h PARAMETER 30 10 3 1 hre (x10 -4) hoe (uS) hje (KW) -1 -3 -10 -30 -100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure13 h PARAMETER-VCE R ECTRON DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. R ECTRON