2SD596

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) R ECTRON 2SD596 FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 EMITTER 2 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. O 0.019(2.00) 0.071(1.80) 1 3 2 0.118(3.00) 0.110(2.80) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) Collector cut-off current (VCB= 30V, IE=0) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 1V, IC= 100mA) DC current gain (VCE= 1V, IC= 700mA) Collector-emitter saturation voltage (IC= 700mA, IB= 70mA) Base-emitter voltage (VCE= 6V, IC= 10mA) Transition frequency (VCE= 6V, IC= 10mA) * Pulse teat: Pulse width