BAV16W

RECTRON ECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAV16W SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 150mAmpere FEATURES * * * * * * Compact surface mount with same foot print as mini-melf High Breakdown Voltage Fast Switching Speed 400mW Power Dissipation General Purpose Switching Applications High Conductance SOD-123 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram .110(2.80) .102(2.60) .067(1.70) .059(1.50) .026(.65) .018(.45) .152(3.85) .140(3.55) .006(.15) .003(.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .049(1.25) .041(1.05) .004(.10) .000(.00) REF .020(0.50) Dimensions in inches and (millimeters) MAXIMUM RAT INGS (@ TA=25 OC unless otherwise noted) RATINGS Non-Repetitive Peak Reverse Voltage Maximum R epetitive Peak R everse Voltage Maximum Working Peak reverse Voltage Maximum DC Blocking Voltage Maximum RMS V oltage Maximum Forward Comtinuous Current Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current Typical Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) M aximum P ower Dissipation (Note 3) Typical Thermal Resistance Operating and Storage Temperature Range SYMBOL VRM VRRM VRWM VR VRMS IFM IO @t=1.0uS @t=1.0S BAV16W 100 75 53 300 150 2.0 1.0 UNITS Volts Volts Volts mAmps mAmps Amps nS pF mW O IFSM Trr CJ PD R θJA TJ, TSTG 4 2 400 315 -65 to + 150 C/W O C ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted) SYMBOL CHARACTERISTICS Maximum Instantaneous Forward Voltage @IF=1.0mA @IF=10mA @IF=50mA @IF=150mA @VR=20V, @VR=75V, @VR=25V, @VR=75V, TJ=25 O C TJ=25 O C TJ=150 O C TJ=150 O C BAV16W 0.715 0.855 1.0 25 1.25 1.0 30 50 UNITS Volts n Amps uAmps uAmps uAmps VF Maximum I nstantaneous Reverse Current IR . N OTES : 1. Measured at I F=I R=10mA, I RR=0.1I R A nd R L=100 . 2 . Measured at 1MHz and applied reverse voltage of 0 volts. 3 . Part mounted on FR-4 PC board with minimunm recommended pad layout. 2006-3 RATING AND CHARACTERISTICS CURVES ( BAV16W ) 500 1000 PD, POWER DISSIPATION (mW) 400 IF, INSTANTANEOUS FORWARD CURRENT(mA) 0 25 50 75 100 125 O 100 300 10 200 1.0 100 0.1 0 150 175 .01 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE(V) 2 T A, AMBIENT TEMPERATURE( C) FIG.1 FORWARD DERATING CURVE 10,000 FIG.2 FORWARD CHARACTERISTICS IR, LEAKAGE CURRENT (nA) 1,000 100 10 1 0 100 TJ, JUNCTION TEMPERATURE( C) O 180 FIG.3 LEAKAGE CURRENT VS. JUNCTION TEMPERATURE R ECTRON DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. R ECTRON