BC817

BC817 TECHNICAL SPECIFICATION NPN Silicon Planar Epitaxial Transistor Dimensions SOT-23 1 2 3 BASE EMITTER COLLECTOR Absolute Maximun Ratings (Ta=25oC unless specified otherwise) Desription Collector-Emitter Voltage (V BE = 0V) Collector Emitter Voltage (open base) Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - (DC) Base Current - Peak Total Power Dissipation up to Tamb = 25 °C Storage Temperature Junction Temperature IC = 1 0mA SYMBOL VCES VCEO VEBO IC ICM (-IEM ) IB IBM Ptot Tstg TJ VALUE 50 45 5 500 1000 1000 100 200 250 (-55 to +150) 150 UNITS V V V mA mA mA mA mA mW °C °C Thermal Resistance From junction to ambient Rth(j-a) 500 k/W Electical Characteristics (at Ta = 25°C unless otherwise specified) Symbol Collector Cut off Current Emitter cut-off current Base Emitter on Voltage Saturation Voltage DC Current Gain Collector Capacitance Transition Frequency ICBO IEBO VBE VCEsat hFE CC fT Test Conditions VCB = 20V, IE = 0, TJ = 25°C VCB = 20V, IE = 0, TJ = 150°C IC = 0, VEB = 5V IC = 500 mA, VCE = 1V IC = 500 mA, IB = 50mA IC = 500 mA, VCE = 1V IC = 100 mA, VCE = 1V IE = IE = 0, VCB = 10V, f = 1MHz IC = 10mA, VCE = 5V, f =100MHz < < < < < > typ. > Typ. 100 5 10 1, 2V 700 40 100 to 600 5 100 Unit nA µA µA V mV pF MHz