BC847C

BC847C

  • 厂商:

    RECTRON(丽正)

  • 封装:

  • 描述:

    BC847C - SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) - Rectron Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BC847C 数据手册
BC847C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 50 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 EMITTER 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 2 0.055(1.40) 0.047(1.20) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. O 0.019(2.00) 0.071(1.80) 1 3 2 0.118(3.00) 0.110(2.80) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Collector - base breakdown voltage (IC= 10mA, IE=0) Collector - emitter breakdown voltage (IC= 10mA, IB=0) Emitter - base breakdown voltage (IE= 10mA, IC=0) Collector cut - off current (VCB= 50V, IE=0) Collector cut - off current (VCE= 45V, IB=0) Emitter cut - off current (VEB= 5V, IC=0) DC current gain (VCE= 5V, IC= 2mA) Collector - emitter saturation voltage (IC= 100mA, IB= 5mA) Base - emitter saturation voltage (IC= 100mA, IB= 5mA) Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ) DEVICE MARKING BC847C Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. 1G 2007-3 SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) MIN 50 45 6 420 100 MAX 0.1 0.1 0.1 800 0.5 1.1 UNITS V V V mA mA mA V V MHZ o fT DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
BC847C
1. 物料型号: - 型号为BC847C。

2. 器件简介: - BC847C是一款SOT-23封装的双极型晶体管(NPN型)。

3. 引脚分配: - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

4. 参数特性: - 最大功耗(PCM):0.225W(环境温度Tamb=25°C) - 集电极最大电流(ICM):0.1A - 集电极-基极最大电压(VCBO):50V - 工作和存储结温范围(Tstg):-55°C至+150°C

5. 功能详解: - 该晶体管具有较高的直流电流增益(hFE),在VcE=5V且Ic=2mA时,hFE的范围是420至800。 - 集电极-发射极饱和电压(VcE(sat))在Ic=100mA且Ib=5mA时小于0.5V。 - 基极-发射极饱和电压(VBE(sat))在Ic=100mA且Ib=5mA时小于1.1V。 - 过渡频率(fT)在VcE=5V且Ic=10mA时为100MHz。

6. 应用信息: - 该型号的晶体管适用于一般的小信号放大应用,由于其SOT-23封装,适合用于PCB板上的表面贴装。

7. 封装信息: - 封装类型为SOT-23,塑封材料为环氧树脂,符合UL 94V-0阻燃等级。 - 引线符合MIL-STD-202E方法208C标准,并且保证无铅(Pb-free)。 - 封装重量为0.008克。
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