BC856 BC857 BC858
PNP Silicon Planar Epitaxial Transistors
Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature Thermal Resistance From junction to tab From tab to soldering points From soldering points to ambient SYMBOL VCBO VCEX VCEO VEBO IC ICM IEM IBM Ptot** Tstg Tj Rth(j-t) Rth(t-s) Rth(s-a)** BC856 80 80 65 BC857 50 50 45 5 100 200 200 200 250 -55 to +150 150 60 280 90 K/W BC858 30 30 30 UNITS V V V V mA mA mA mW
o o
C C
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
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BC856 BC857 BC858
Electrical Characteristics (at Ta=25 oC unless otherwise specified) DESCRIPTION Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VBE(on)* VCE(Sat) VBE(Sat)*** VCEK
VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150 C IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA
IC = 10mA, -IB = Value for which 0.7 0.85
o
MIN TYP MAX
15 4 0.6 0.75 0.82 0.30 0.65
UNITS nA uA V V V
0.60
IC = 11mA at -VCE = 1V IC = 2mA, VCE = 5V BC856 125 125 125 220 420
4.5
V
475 800 250 475 800
hFE
BC857/BC858 BC856A/BC857A/BC858A BC856B/BC857B/BC858B BC857C/BC858C
Collector Capacitance Transition Frequency Small Signal Current Gain
CC fT | hfe |
IE = ie = 0, VCB = 10V, f = 1MHZ IC = 10mA, VCB = 5V, f = 100MHZ
100 125 125 500 800 10
pF MHZ
Noise Figure
NF
IC = 2mA, VCE = 5V, f= 1kHZ BC856 BC857/BC858 IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
dB
*VBE (on) decreases by about 2mV/K with increase temperature. ***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
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