BCW66G

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) R ECTRON BCW66G * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C FEATURES SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram BASE 1 EMITTER 2 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase , half wave, 60H Z , resistive or inductive load. For capacitive load, derate current by 20%. O 0.019(2.00) 0.071(1.80) 1 3 2 0.118(3.00) 0.110(2.80) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) O CHARACTERISTICS Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) Collector cut-off current (VCB= 45V, IE=0) Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 0.1mA) DC current gain (VCE= 1V, IC= 10mA) DC current gain (VCE= 1V, IC= 100mA) DC current gain (VCE= 2V, IC= 500mA) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) Base-emitter saturation voltage (IC= 100mA, IB= 10mA) Base-emitter saturation voltage (IC= 500mA, IB= 50mA) Transition frequency (VCE= 10V, IC= 20mA, f=100MHZ) Collector base capacitance (VCB= 10V, IE= 0, f=1MHZ) Emitter base capacitance (VEB= 0.5V, IE= 0, f=1MHZ) Noise figure (VCE= 5V, IE= 0.2mA, f=1kHz, Df=200Hz, RG=2KW) Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN 75 45 5 50 TYP EG MAX 0.02 0.02 400 0.3 0.7 1.25 2 12 80 10 UNITS V V V mA mA V V V V MHz pF pF dB hFE 110 160 60 VCE(sat) VBE(sat) fT CCB CEB NF 100 - 2006-3 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. R ECTRON