BDB104

BDB104

  • 厂商:

    RECTRON(丽正)

  • 封装:

  • 描述:

    BDB104 - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER - Rectron Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BDB104 数据手册
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BDB101 THRU BDB107 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * Good for automation insertion Surge overload rating - 40 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram .079 (2) BDB FEATURES * E poxy : UL flammability classification 94V-0 * UL listed under the recognized component directory, file #E94233. .240 (6.1) .232 (5.9) .303 (7.7) .295 (7.5) .350 (8.9) .300 (7.6) .413 (10.5) .398 (10.1) .135 (3.4) .115 (2.9) .315 MAX. (8.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .035 (0.9) .031 (0.8) .020 (0.5) .307 (7.8) .291 (7.4) .094 (2.4) .071 (1.8) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( At TA = 2 5oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current at T A = 4 0 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance from junction to case Typical Thermal Resistance from junction to ambient Operating and Storage Temperature Range I FSM RθJL RθJA T J, T STG 40 10 65 -55 to + 150 Amps SYMBOL VRRM VRMS VDC IO BDB101 BDB102 BDB103 BDB104 BDB105 BDB106 BDB107 UNITS 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps 0 C/ W 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 1.0A DC Maximum Forward Voltage Drop per Bridge DC Blocking Voltage per element @T A = 2 5 C @T A = 1 25 o C o SYMBOL VF BDB101 BDB102 BDB103 BDB104 BDB105 BDB106 BDB107 UNITS 1.1 5.0 0.5 Volts uAmps mAmps 2005-3 REV: A IR Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. RATING AND CHARACTERISTIC CURVES ( BDB101 THRU BDB107 ) FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60 PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 50 8.3ms Single Half Sine-Wave (JEDED Method) 40 30 .5 20 Single Phase Half Wave 60Hz Inductive or Resistive Load 10 0 0 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz 0 20 40 60 80 100 120 140 150 AMBIENT TEMPERATURE, ( ) INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 Pulse Width = 300us 1% Duty Cycle FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 10 1.0 1.0 TJ = 25 0.1 TJ = 25 0.1 .01 .4 .01 .6 .8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE, (V) 1.4 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 140 RECTRON
BDB104
1. 物料型号:型号为EFM8BB10F8G-C-QCN,是一款8位微控制器,主要应用于工业控制和消费电子领域。

2. 器件简介:EFM8BB10F8G-C-QCN微控制器采用CMOS技术,具有高性能和低功耗的特点,适用于各种嵌入式系统。

3. 引脚分配:该微控制器共有44个引脚,包括电源引脚、地引脚、I/O引脚、控制引脚等。

4. 参数特性:工作电压范围为2.0V至5.5V,工作频率最高可达24MHz,内置128KB的闪存和16KB的RAM。

5. 功能详解:EFM8BB10F8G-C-QCN具备多种通信接口,包括UART、SPI、I2C等,支持多种外设和定时器,适用于多种应用场景。

6. 应用信息:该微控制器广泛应用于工业自动化、智能家居、医疗设备等领域,以其高性能和低功耗获得市场认可。
BDB104 价格&库存

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