PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS
High Voltage Video Amplifier
Darlington Transistor
* Power Dissipation: PD=625mW
BF491 THRU BF493
TO-92
.205(5.20) .175(4.45) .210(5.33) .170(4.32) .50(12.7MIN.)
321
.082(2.082) .078(1.982)
.022(0.55) .016(0.41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
.058(1.40) .045(1.14)
.055(1.40) .045(1.14)
.020(0.50) .014(0.35)
COLLECTOR
.165(4.19) .125(3.18) .062(1.53) .045(1.14)
1
321
BASE
2 3
EMITTER
Dimensions in inches and (millimeters)
Absolute Maximum Ratings T A=25 OC unless otherwise noted DESCRIPTION Collector-Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj,TSTG BF491 200 200 6 BF492 250 250 8 500 625 1.2 1500 12 -55 to + 150 BF493 300 300 8 UNITS Volts Volts Volts mAmps mW
0 mW/ C
mW mW/ 0C
0
C
ELECTRICAL CHARACTERISTICS T A=25 OC unless otherwise noted DESCRIPTION Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Test Condition IC=0.1mA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=160V,IE=0 VCB=200V,IE=0 VEB=4.0V,IC=0 VEB=6.0V,IC=0 IC=1mA,VCE=10V IC=10mA,VCE=10V IC=20mA,IB=2mA IC=20mA,IB=2mA SYMBOL BVCBO BVCEO* BVEBO ICBO IEBO BF491 >200 >200 >6.0 8.0 UNITS Volts Volts Volts uA uA
DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
hFE
VCE(sat) VBE(sat)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Current Gain-Bandwidth Product Feedback Capacitance
SYMBOL
TEST CONDITION
I C=10mA, VCE=20V, f=20MHz VCB=100V, f=1MHz, IE=0
BF491 >50 50 50
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