BF493

PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW BF491 THRU BF493 TO-92 .205(5.20) .175(4.45) .210(5.33) .170(4.32) .50(12.7MIN.) 321 .082(2.082) .078(1.982) .022(0.55) .016(0.41) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. o .058(1.40) .045(1.14) .055(1.40) .045(1.14) .020(0.50) .014(0.35) COLLECTOR .165(4.19) .125(3.18) .062(1.53) .045(1.14) 1 321 BASE 2 3 EMITTER Dimensions in inches and (millimeters) Absolute Maximum Ratings T A=25 OC unless otherwise noted DESCRIPTION Collector-Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj,TSTG BF491 200 200 6 BF492 250 250 8 500 625 1.2 1500 12 -55 to + 150 BF493 300 300 8 UNITS Volts Volts Volts mAmps mW 0 mW/ C mW mW/ 0C 0 C ELECTRICAL CHARACTERISTICS T A=25 OC unless otherwise noted DESCRIPTION Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Test Condition IC=0.1mA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=160V,IE=0 VCB=200V,IE=0 VEB=4.0V,IC=0 VEB=6.0V,IC=0 IC=1mA,VCE=10V IC=10mA,VCE=10V IC=20mA,IB=2mA IC=20mA,IB=2mA SYMBOL BVCBO BVCEO* BVEBO ICBO IEBO BF491 >200 >200 >6.0 8.0 UNITS Volts Volts Volts uA uA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Current Gain-Bandwidth Product Feedback Capacitance SYMBOL TEST CONDITION I C=10mA, VCE=20V, f=20MHz VCB=100V, f=1MHz, IE=0 BF491 >50 50 50