0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BZX584C5V1

BZX584C5V1

  • 厂商:

    RECTRON

  • 封装:

    SOD523(SC-79)

  • 描述:

    DIODE ZENER 5.1V 200MW SOD-523

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX584C5V1 数据手册
BZX584C SERIES ZENER DIODE  )($785(6 3ODQDU'LH&RQVWUXFWLRQ =HQHU9ROWDJHVIURP±9 62' ‡ ‡         0$;,0805$7,1*6 7D ć XQOHVVRWKHUZLVHVSHFLILHG   &KDUDFWHULVWLF 6\PERO 9DOXH 8QLW VF 0.9 V Power Dissipation P' 200 mW Thermal ResistanceIURP Junction to Ambient RșJA  ℃/: -XQFWLRQTemperature TM - 55a+150 ℃ TVWJ -5a+150 ℃ Forward Voltage  Storage       Temperature  @IF=10mA 2018 -08 /02 REV:B    Ta=25℃ unless otherwise specified Type Type Number Code Maximum Zener Impedance Zener Voltage Range (Note 2) VZ@IZT Maximum Typical temperature Reverse coefficient Current @ IZT (Note 3) IZT Nom(V) Min(V) Max(V) (mA) ZZT@IZT ZZK@IZK ( ) IR VR mV/°C (mA) ( A) (V) Min Max BZX584C2V4 50 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZX584C2V7 51 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZX584C3V0 52 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZX584C3V3 53 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZX584C3V6 54 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZX584C3V9 55 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZX584C4V3 56 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZX584C4V7 57 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZX584C5V1 58 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZX584C5V6 59 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZX584C6V2 5A 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZX584C6V8 5B 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZX584C7V5 5C 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZX584C8V2 5D 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZX584C9V1 5E 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZX584C10 5F 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZX584C11 5G 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZX584C12 5H 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZX584C13 5J 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 BZX584C15 5K 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZX584C16 5L 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZX584C18 5M 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 BZX584C20 5N 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZX584C22 5P 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZX584C24 5R 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZX584C27 5S 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZX584C30 5T 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 BZX584C33 5U 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 BZX584C36 5V 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZX584C39 5X 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZX584C 5Y .0 4 .0 2 1 0 0 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2.Tested with pulses, period=5ms,pulse width =300 s. 3. f = 1 0.1 RATING AND CHARACTERISTICS CURVES ( BZX584C SERIES) Zener Characteristics VZ Up to 10 V Zener Characteristics 11 V to 43 V 100 50 43 39 36 33 30 27 10 10 24 9.1 9 1 20 22 8.2 7.5 6.2 6.8 5.1 5.6 4.7 8 PD =150mW 10 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 10 2.4 IZ, ZENER CURRENT (mA) Ta =25ć PD =150mW Pulsed 15 16 18 Ta =25ć 1 0.5 1 2 3 4 5 6 7 0.1 10 11 15 20 VZ, ZENER VOLTAGE (V) Temperature Coefficients 30 35 40 45 50 Typical Leakage Current 40 100 Pulsed TYPICAL Ta VALUES 35 FOR BZX584CXXX SERIES 10 30 IR, LEAKAGE CURRENT (uA) șVZ, TEMPERATURE COEFFICIENT (mV/ć) 25 VZ, ZENER VOLTAGE (V) 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100ć 1E-3 0 Ta=25ć -5 1E-4 0 4 8 12 16 20 24 28 32 36 40 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 35 Ta=25ć f=1MHz ZZT, DYNAMIC IMPEDANCE(ȍ) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS 1 f=1kHz 100 IZ=5mA 10 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) 1 10 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 300 200 PD (mW) 45 1000 Ta=25ć POWER DISSIPATION 40 Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 C, CAPACITANCE (pF) 30 VZ, NOMINAL ZENER VOLTAGE (V) 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 T 125 150 (ć ) " " " "" " " 100 62'3DFNDJH2XWOLQH'LPHQVLRQV 6\PERO A A1 b c D E E1 E2 L  'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF 62' 6XJJHVWHG3DG/D\RXW  " " " "" " " 62'7DSHDQG5HHO " " " "" " " DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
BZX584C5V1
- 物料型号:BZX584C系列 - 器件简介:该系列二极管采用平面芯片结构,提供2.4V至43V的齐纳电压,封装为SOD-523。 - 引脚分配:文档中未明确提供引脚分配图,但SOD-523封装通常有2个引脚,阳极和阴极。 - 参数特性: - 最大额定值包括200mW的功耗、833°C/W的热阻、-55°C至+150°C的工作结温和存储温度。 - 齐纳电压范围、最大齐纳阻抗、最大反向电流和典型温度系数等参数随型号而变化。 - 功能详解:文档提供了不同型号的齐纳二极管的详细特性曲线和数据,包括齐纳特性、温度系数和典型泄漏电流。 - 应用信息:文档中未明确提供应用案例,但齐纳二极管通常用于稳定电压、过压保护等。 - 封装信息:提供了SOD-523封装的尺寸和建议的焊盘布局,以及胶带和卷轴的包装描述。
BZX584C5V1 价格&库存

很抱歉,暂时无法提供与“BZX584C5V1”相匹配的价格&库存,您可以联系我们找货

免费人工找货