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BZX984B3V9

BZX984B3V9

  • 厂商:

    RECTRON

  • 封装:

    SOD923

  • 描述:

    DIODE ZENER 3.9V 150MW SOD-923

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX984B3V9 数据手册
BZX84C2V4 THRU BZX84C75 Features SOT-23 A Dim Planar Die Construction 500mW Power Dissipation Zener Voltages from 2.4V - 75V Ideally Suited for Automated Assembly Processes ESD:HBM ----3B,MSL:Level 1 B Min Max C TOP VIEW E D G H M K J L All Dimensions in mm Maximum Ratings @TA =25 C unless otherwise specified Characteristic Forward Voltage Symbol @ I F = 10mA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: Pd R Tj, TSTG 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300μ s pulse width, period = 5ms. 3. f = 1KHz. Value VF Unit V 500 mW 357 K/W -65 to +150 C 2020-11/03 REV:E   Nominal Zener Voltage  Max. Zener Impedance  Max.Reverse Leakage Part Number  Marking   Vz(V) @ I ZT *1 ZZT @ I ZT Nom.  Min.  Max.  Ohm  ZZK @ I ZK Current  IR @ VR  mA  Ohm  mA  μ A  V  BZX84C2V4  Z11  2.4  2.28  2.52  100  5  600  1  50  1.0  BZX84C2V7  Z12  2.7  2.5  2.9  100  5  600  1  20  1.0  BZX84C3V0  Z13  3  2.8  3.2  95  5  600  1  10  1.0  BZX84C3V3  Z14  3.3  3.1  3.5  95  5  600  1  5  1.0  BZX84C3V6  Z15  3.6  3.4 3.8  90  5  600   5  1.0  BZX84C3V9  Z16  3.9  3.7  4.1  90  5  600  1  3  1.0  BZX84C4V3  Z17  4.3  4 4.6  90  5  600  1  3  1.0  BZX84C4V7  Z1  4.7  4.4 5  80  5  500  1  3  2.0  BZX84C5V1  Z2  5.1  4.8 5.4  60  5  480  1  2  2.0  BZX84C5V6  Z3  5.6  5.2  6  40  5  400  1  1  2.0  BZX84C6V2  Z4  6.2  5.8  6.6  10  5  150  1  3  4.0  BZX84C6V8  Z5  6.8  6.4  7.2  15  5  80  1  2  4.0  BZX84C7V5  Z6  7.5  7  7.9  15  5  80  1  1  5.0  BZX84C8V2  Z7  8.2  7.7  8.7  15  5 80  1  0.7  5.0  BZX84C9V1  Z8  9.1  8.5  9.6  15  5 100  1  0.5  6.0  BZX84C10  Z9  10  9.4  10.6  20  5 150  1  0.2  7.0  BZX84C11  Y1  11  10.4  11.6  20  5  150  1  0.1  8.0  BZX84C12  Y2  12  11.4  12.7  25  5  150  1  0.1  8.0  BZX84C13  Y3  13  12.4  14.1  30  5  170  1  0.1  8.0  BZX84C15  Y4  15  13.8  15.6  30  5  200  1  0.1  10.5  200  1  0.1  11.2  BZX84C16  Y5  16  15.3  17.1  40  5  BZX84C18  Y6  18  16.8  19.1  45  5  225  1  0.1  12.6  BZX84C20  Y7  20  18.8  21.2  55  5  225  1  0.1  14.0  BZX84C22  Y8  22  20.8  23.3  55   250  1  0.1  15.4  BZX84C24  Y9  24  22.8  25.6  70  5  250  1  0.1  16.8  BZX84C27  Y10  27  25.1  28.9  80  2  300  1  0.1  18.9  BZX84C30  Y11  30  28  32  80  2  300  1  0.1  21.0  BZX84C33  Y12  33  31  35  80  2  325  1  0.1  23.1  BZX84C36  Y13  36  34  38  90  2  350  1  0.1  25.2  BZX84C39  Y14  39  37  41  130  2  350  1  0.1 27.3  BZX84C43 Y15 43 4085  45.15  150  5  375 1  0.1 30.1  BZX84C47 Y16 47 4465  49.35  170  5  375  1  0.1  32.9  BZX84C51 Y17 51 48.45  5355  100  5  400 1  0.1  35.7  BZX84C62 Y19 62 58.0 66.0 215 2 450  0.5 0.05 43.4 BZX84C68  Y20 68 64.60 71.40 240 2 1600 0.25 0.1 52 BZX84C75  Y21 75 71.25 78.75 265 2 1700 0.25 0.1 56 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300μs pulse width, period = 5ms. 3. f = 1KHz. RATING AND CHARACTERISTICS CURVES (BZX84C2V4 THRU BZX84C75) 500 50 Tj = 25°C C2V7 See Note 1 C3V3 IZ, ZENER CURRENT (mA) Pd, Power Dissipation (mW) C5V6 C4V7 C6V8 40 400 300 200 C8V2 30 20 10 100 0 Test Current IZ 5.0mA 0 100 0 200 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics TA, Ambient Temperature, (°C) Fig. 1 Power Derating Curve 30 C3V9 Tj = 25°C 2 10 C10 Tj = 25°C C39 10 C47 C43 C51 IZ, ZENER CURRENT (mA) C15 20 C18 Test current IZ 2mA C22 10 C27 Test current IZ 5mA C33 C36 8 6 4 Test Current IZ 2mA 2 0 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 40 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 1000 Tj = 25 °C Cj, JUNCTION CAPACITANCE (pF) IZ, ZENER CURRENT (mA) C12 VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Junction Capacitance vs Nominal Zener Voltage PACKAGING OF DIODE REEL PACK PACKAGE PACKING CODE REEL ( EA ) SOT-23/-3L -T 3,000 COMPONENT TAPE SPACE SPACE(mm) (mm) --- --- REEL DIA (mm) CARTON SIZE (mm) EA PER CARTON GROSS WEIGHT(Kg) 178 438*438*220 180,000 --- DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
BZX984B3V9
1. 物料型号:文档列出了多种型号的齐纳二极管,包括BZX84C2V4、BZX84C2V7、BZX84C3V0等,直到BZX84C75。

2. 器件简介:这些齐纳二极管采用平面芯片结构,功率耗散为500mW,适用于自动装配流程,静电放电(ESD)等级为HBM 3级,MSL等级为1级。

3. 引脚分配:文档提供了SOT-23封装的顶视图和尺寸,包括各引脚的最小和最大尺寸。

4. 参数特性:包括最大额定值,如齐纳二极管的正向电压(VF)、功率耗散(Pd)、热阻(R01A)以及工作和存储温度范围。

5. 功能详解:文档详细列出了每个型号的标称齐纳电压(Vz)、最大齐纳阻抗、最大反向漏电流(IR)等参数,并提供了相关的测试条件。

6. 应用信息:虽然文档没有直接提供应用信息,但齐纳二极管通常用于电路中稳定电压、过压保护等。

7. 封装信息:文档提供了SOT-23/-3L封装的卷带包装信息,包括卷带编码、卷带数量、组件间距、卷径、纸箱尺寸、每箱数量和毛重。

8. 免责声明:文档最后包含了免责声明,指出Rectron公司保留随时更改产品规格的权利,并不承担因使用数据表或产品引起的任何责任。
BZX984B3V9 价格&库存

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