CMBT2222A-T

CMBT2222A MMBT2222A NPN SOT23 Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings Collector-base voltage (open emitter) Collector-emmitter voltage (open base) Emmitter base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25oC D.C. current gain IC = 150mA; VCE = 10V IC = 500mA; VCE = 10V Transition frequency at f = 100MHZ IC = 20mA; VCE = 20V Symbol Value UNIT VCBO min 75 V VCEO min 40 V VEBO min 6.0 V IC max 600 mA Ptot max 300 mW hFE fT 100 to 300 > 40 > 300 MHZ Ratings (at TA = 25oC unless otherwise specified) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25oC Storge Temperature Junction Temperature Thermal Resistance from junction to Ambient Symbol Value UNIT VCBO min 75 V VCEO min 40 V VEBO min 6.0 V IC max 600 mA Ptot max 250 mW Tstg Tj -55 to +150 max 150 Rth j-a 500 o o C C K/W REV: D 1 of 3 CMBT2222A MMBT2222A Characteristics (at Tj=25 oC unless otherwise specified) Symbol Collector cut-off current IE = 0; VCB = 60V ICBO o I IE = 0; VCB = 60V; Tj = 125 C CBO VEB = 3 V; VCE = 60V ICEX Base current IBEX with reverse biased emitter junction VFB = 3V; VCE = 60V Emitter-base cut-off current IEBO IC = 0; VEB = 3 V Saturation voltage IC = 150mA; IB = 15 mA VCEsat VBEsat IC = 500mA; IB = 50 mA VCEsat VBEsat Breakdown voltages IC = 1.0mA; IB = 0 V(BR)CEO IC = 100uA; IE = 0 V(BR)CBO IC = 0; IE = 10uA V(BR)EBO D.C. current gain IC = 0.1mA; VCE = 10V IC = 1mA; VCE = 10V IC = 10mA; VCE = 10V IC = 10mA; VCE = 10V; Tamb= -55oC IC = 150mA; VCE = 10V IC = 150mA; VCE = 1V IC = 500mA; VCE = 10V Transition frequency at f = 100 MHZ IC = 20mA; VCE = 20V Output capacitance at f = 1 MHZ IE = 0; VCB = 10V Input capacitance at f = 1 MHZ IE = 0; VEB = 0.5V Noise figure at RS = 1K ohm IC = 100uA; VCE = 10V; f= 1kHZ hFE Value UNIT < 0.01 < 10 < 10 uA nA < 20 nA < 10 nA < 300 0.6 to 1.2 < 1.0 < 2.0 > > > mV V V V 40 75 6.0 V > 35 > 50 > 75 > 35 100 to 300 > 50 > 40 fT > 300 MHZ CO < 8.0 pF Ci < 25 pF F < 4.0 dB td tr < < 10 25 ts tf < < 225 60 Switching times (between 10% and 90% levels) Turn-on time switched to IC= 150mA delay time rise time Turn-off time switched from IC= 150mA storage time fall time www.rectron.com ns 2 of 3 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.