CMBT2222A

CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings Collector-base voltage (open emitter) Collector-emmitter voltage (open base) Emmitter base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25oC D.C. current gain IC = 150mA; VCE = 10V IC = 500mA; VCE = 10V Transition frequency at f = 100MHZ IC = 20mA; VCE = 20V Symbol VCBO VCEO VEBO IC Ptot hFE fT Value max 75 max 40 max 6.0 max 600 max 250 100 to 300 > > 40 300 UNIT V V V mA mW MHZ Ratings (at TA = 25oC unless otherwise specified) Limmiting values Symbol Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25oC Storge Temperature Junction Temperature Thermal Resistance from junction to Ambient www.rectron.com Value max 75 max 40 max 6.0 max 600 max 250 -55 to +150 max 150 500 UNIT V V V mA mW o o VCEO VEBO IC Ptot Tstg Tj Rth j-a C C K/W 1 of 3 CMBT2222A NPN Silicon Planar Epitaxial Transistors Characteristics (at Tj=25 oC unless otherwise specified) Symbol Collector cut-off current IE = 0; VCB = 60V ICBO o ICBO IE = 0; VCB = 60V; Tj = 125 C VEB = 3 V; VCE = 60V ICEX Base current IBEX with reverse biased emitter junction VFB = 3V; VCE = 60V Emitter-base cut-off current IEBO IC = 0; VEB = 3 V Saturation voltage IC = 150mA; IB = 15 mA VCEsat VBEsat IC = 500mA; IB = 50 mA VCEsat VBEsat Breakdown voltages IC = 1.0mA; IB = 0 V(BR)CEO IC = 100uA; IE = 0 V(BR)CBO IC = 0; IE = 10uA V(BR)EBO D.C. current gain IC = 0.1mA; VCE = 10V IC = 1mA; VCE = 10V IC = 10mA; VCE = 10V IC = 10mA; VCE = 10V; Tamb= -55oC IC = 150mA; VCE = 10V IC = 150mA; VCE = 1V IC = 500mA; VCE = 10V Transition frequency at f = 100 MHZ IC = 20mA; VCE = 20V Output capacitance at f = 1 MHZ IE = 0; VCB = 10V Input capacitance at f = 1 MHZ IE = 0; VEB = 0.5V Noise figure at RS = 1K ohm IC = 100uA; VCE = 10V; f= 1kHZ Value < 0.01 < 10 < 10 < < 20 10 UNIT uA nA nA nA mV V V V < 300 0.6 to 1.2 < 1.0 < 2.0 > > > 40 75 6.0 V hFE > 35 > 50 > 75 > 35 100 to 300 > 50 > 40 > < < < 300 8.0 25 4.0 MHZ pF pF dB fT CO Ci F www.rectron.com 2 of 3 CMBT2222A NPN Silicon Planar Epitaxial Transistors Switching times (between 10% and 90% levels) Turn-on time switched to IC= 150mA delay time rise time Turn-off time switched from IC= 150mA storage time fall time td tr ts tf < < < < 10 25 225 60 ns www.rectron.com 3 of 3