CSA950

TECHNICAL SPECIFICATION SEMICONDUCTOR RECTRON CSA950 PNP Planar Epitaxial Transistor TO-92 DIM A B C D E F G H MIN 4.32 4.45 3.18 0.41 0.35 5q 1.14 1.14 12.70 MAX 5.33 5.2 4.19 0.50 0.50 5q 1.40 1.53 - 1. BASE 2. EMITTER 3. COLLECTOR K Absolute Maximun Ratings (Ta=25oC) Symbol Collector-Emmiter Voltage Collector Base Voltage Emitter Base Voltage Collector current Emitter Current Collector Power Dissipation Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC IE M PC Tj Tstg Ratings 30 35 5 800 800 600 -50 to +150 Unit V V V mA mA mW °C Characteristics Ratings (at Ta = 25°C unless otherwise specified) Symbol Collector Emitter Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain VCEO ICBO IEBO hFE (1) hFE (2) Collector Emitter Saturation Voltage Base Emitter on Voltage Transition Frequency Collector Output Capacitance Test Conditions IC = 10mA, IB=0 V C = 35V, IE=0 V EB = 5V, IC =0 V CE = 1V, IC = 100mA V CE = 1V, IC = 700mA min. 30 Typ. max. 0.1 0.1 Unit V µA µA 100 35 320 VCE (SAT)* IC = 500mA, IB = 20mA VBE (on) fT Cob V CE = 5V, IC = 10mA IC = 10mA, V CE=5V V CB = 10V, IE = 0, f = 1MHz 0.5 120 19 0.7 0.8 V MHz pF * Pulse Condition: Width < 300mS, Duty Cycle < 2%