FFM105

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FFM101 THRU FFM107 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram DO-214AC MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. o 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0.004 (0.102) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 5 5o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 25oC Maximum DC Reverse Current at @T A = 2 5 o C Rated DC Blocking Voltage @T A = 1 25 oC Maximum Reverse Recovery Time (Note 4) SYMBOL VF IR trr 150 FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS 1.3 50 5.0 100 250 500 Volts uAmps uAmps uAmps nSec 2002-11 SYMBOL VRRM VRMS VDC IO I FSM (Note 2) R θ JL (Note 3) Rθ JA CJ T J , T STG FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 30 70 15 -55 to + 150 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps 0 0 C/ W C/ W pF 0 C NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A RATING AND CHARACTERISTIC CURVES ( FFM101 THRU FFM107 ) AVERAGE FORWARD CURRENT, (A) FORWARD SURGE CURRENT, (A) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0 .8 .6 .4 .2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) Single Phase Half Wave 60Hz Resistive or Inductive Load FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10 0 1 2 4 6 8 10 20 40 60 80100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine-Wave (JEDED Method) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) 10 4 TJ = 100 INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 TJ = 25 Pulse Width = 300us 1% Duty Cycle 1.0 .4 1.0 .1 .04 TJ = 25 .1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) .01 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) TJ = 25 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A trr (-) PULSE GENERATOR (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 1 NOTES: Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. -1.0A 1cm SET TIME BASE FOR 50/100 ns/cm JUNCTION CAPACITANCE, (pF) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC RECTRON Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON