GDSGA0-900E

SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON GDSGA0-500E GDSGA0-700E GDSGA0-900E GDSGA0-B00E STANDARD GPP CHIP - 100MIL PRODUCT SPECIFICATIONS CHIPS FOR STD GPP/SOLDERING TYPE TYPE: GDSGA0 SERIES CHIP APPEARANCE CHIP DIMENSIONS CHIP SIZE 75mil 100mil GDSGA0-500E GDSGA0-700E GDSGA0-900E GDSGA0-B00E 100 x 100 mils Contact area 75 x 75 mils Total CHIP THICKNESS 11 mils 10.2mil 11mil SOLDERABLE METALLIZATION Ni / Au FEATURES * Silicon chip with Boron / Phosphorus dopants * Solderable metallization Ni / Au * Glass passivated junction R AT I N G S Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current at Derating Case Temperature Maximum Instantaneous Forward Voltage at 3A DC Maximum Average Reverse Current at Rated DC Blocing Voltage Operating Temperature Range Storage Temperature Range @ TA=25OC @ TA=100OC SYMBOL VR IO VF IR TJ TSTG GDSGA0-500E 400 GDSGA0-700E 600 3 1.1 5 300 150 -55 to + 150 GDSGA0-900E 800 GDSGA0-B00E 1000 UNITS Volts Amps Volts uAmps 0 0 C C