HFM306

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HFM301 THRU HFM308 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram DO-214AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 200 70 -65 to + 175 HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 3.0 150 50 600 420 600 800 560 800 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 3.0A DC Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. SYMBOL VF IR trr 50 HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307 HFM308 1.0 1.3 50 10 150 75 1.7 UNITS Volts uAmps uAmps uAmps nSec 1998-8 Back RECTRON