MM4448

SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON MM4448 1N4448 mini-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta = 25°C) ITEMS Peak Reverse Voltage Reverse Recovery Time Power Dissipation Forward Current Junction Temp. Storage Temp. Symbol VRM trr P IFM Tj Tstg Ratings 100 4 500 500 * (-65 to 175) (-65 to 175) Unit V ns mW mA °C °C mini-MELF 0.28 0.50 1.60 Mechanical Data Items Package Case Lead/Finish Chip Materials mini MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated 3.70 3.30 1.30 All Dimensions in mm Ratings Non-Repetive Peak Reverse Voltage Minimum Breakdown Voltage @IR= 100mA Peak Forward Surge Current @ t = 1.0s Forward Continuous Current Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj = 150 °C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IR= -1mA, RL = 100Ω Maximum Thermal Resistance * Note: Device terminals at ambient temperature Symbol VRM BV IFSM IFM VF Ratings 100 75 1* 500 * 1 25 Unit V V A mA V nA µA µA IR 5 30 Cj trr RθJA 4 4 300 pF ns K/W