MMBT2222A

MMBT2222A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907A) SOT-23 MECHANICAL DATA * * * * * COLLECTOR 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS o o Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes: 1. Alumina=0.4*0.3*0.024in. 99.5% alumina. 2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 10mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10mAdc, I C = 0) Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) (V CB = 60Vdc, I E = 0, TA= 125 C) Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0) Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL 40 75 6.0 - 0.1 0.01 10 0.1 20 Vdc Vdc Vdc uAdc uAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C) ( I C = 500mAdc, V CE = 10Vdc) (1) Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) O hFE 35 40 0.6 - 0.3 1.0 1.2 2.0 - VCE(sat) Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) (I C = 10mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE =10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz) Noise Figure (I C = 100mAdc, V CE = 10Vdc, R S = 1.0k W , f= 1.0kHz) fT Cibo hie 300 2.0 0.25 50 75 5.0 25 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF kW hre X 10 -4 hfe - hoe rb,Cc NF umhos ps dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 10 25 225 60 ns ns (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) < NOTES : 1. Pulse Test: Pulse Width-300ms,Duty Cycle