MMBT2222LT1

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) R ECTRON MMBT2222LT1 FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.020(0.500) 0.012(0.300) 0.043(1.100) 0.035(0.900) 0.004(0.100) 0.000(0.000) 0.020(0.50) 0.012(0.30) 0.100(2.550) 0.089(2.250) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. O 0.019(2.00) 0.071(1.80) 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS Zener Current ( see Table "Characteristics" ) o o Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C SYMBOL PD TJ TSTG VALUE 300 -55 to +150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in. 99.5% alumina. SYMBOL R θJA VF MIN. TYP. MAX. 417 UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 10 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µ Adc, I C = 0) Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) (V CB = 60Vdc, I E = 0, TA= 125 C) O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 60 5.0 - 0.1 0.01 10 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain (I C = 0.1mAdc, V CE = 10Vdc) ( I C = 1.0mAdc, V CE = 10Vdc) ( I C = 10mAdc, V CE = 10Vdc) ( I C = 150mAdc, V CE = 10Vdc) (2) ( I C = 500mAdc, V CE = 10Vdc) (2) Collector-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) hFE 35 50 75 100 30 VBE(sat) 0.4 Vdc 1.6 1.3 2.6 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (3) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) < < NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0% 3. fT is defined as the frequency at which |hfe| extrapolates to unity fT Cibo 250 30 MHz pF RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 ) 1000 700 500 300 200 100 70 50 30 20 10 01 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0k hFE,DCCURRENT GAIN Figure 1. DC Current Gain VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) 1.0 0.8 IC,CCLLECTOR CURRENT(mA) 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB,BASE CURRENT(mA) Figure 2. Collector Saturation Region 200 100 70 50 t,TIME(ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC/IB=10 TJ=25OC tr@VCC=30V td@VEB(off)=2.0V td@VEB(off)=0 500 300 200 t,TIME(ns) 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 t's=ts-1/8tf VCC=30V IC/IB=10 IB1=IB2 TJ=25OC tf IC,CLLECTOR CURRENT(mA) IC,CLLECTOR CURRENT(mA) Figure 3.Turn-On Time Figure 4.Turn-Off Time R ECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 ) 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f,FREQUENCY(KHz) NT,NOISE FIGURE(dB) NF,NOISE FIGURE(dB) IC=1.0mA,RS=150Ω 500µΑ,RS=200Ω 100µΑ,RS=2.0KΩ 50µΑ,RS=4.0KΩ RS=OPTIMUM SOURCE RESISTANCE 10 f=1.0KHz 8.0 IC=50µΑ 6.0 4.0 2.0 0 50 100 200 100µΑ 500µΑ 1.0mΑ 500 1.0k 2.0k 5.0k 10k 20k 50k 100k RS,SOURCE RESISTANCE(OHMS) Figure 5.Frequency Effects T,CURRENT-GAINBANDWIDTHPRODUCT(MHz) 30 20 CAPACITANCE(PF) Ceb Figure 6.Source Resistance Effects 500 VCE=20V O TJ=25 C 300 200 10 7.0 5.0 CCb 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 REVERSE VOLTAGE(VOLTS) IC,COLLECTOR CURRENT(mA) Figure 7.Capacitances 1.0 TJ=25 C O Figure 8.Currunt-Gain Bandwidth Product +0.5 0 COEFFICIENT(mV/OC) Rθ VC for VCE(sat) 0.8 V,VOLTAGE(VOLTS) VBE(sat)@IC/IB=10 0.6 0.4 0.2 VCE(sat)@IC/IB=10 VBE(on)@VCE=10V 1.0V -0.5 -1.0 -1.5 -2.0 -2.5 Rθ VB for VBE 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k IC,COLLECTOR CURRENT(mA) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC,COLLECTOR CURRENT(mA) Figure 9."On" Voltages Figure 10.Temperature Coefficients R ECTRON