MMBT2907A

MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -10uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10uAdc, I C = 0) Collector Cutoff Current (V CE = -30Vdc, V BE(off) = -5.0Vdc) Collector Cutoff Current (V CB = -50Vdc, I E = 0) (V CB = -50Vdc, I E = 0, TA= 125 C) Base Current (V CE = -30Vdc, V EB(off) = -0.5Vdc) O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB -60 -60 -5.0 - -50 -0.02 -20 -50 Vdc Vdc Vdc nAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = -0.1mAdc, V CE = -10Vdc) (I C = -1.0mAdc, V CE = -10Vdc) ( I C = -10mAdc, V CE = -10Vdc) (I C = -150mAdc, V CE = -10Vdc)(1) (I C = -500mAdc, V CE = -10Vdc)(1) Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) VCE(sat) hFE 75 100 100 100 50 300 -0.4 -1.6 -1.3 -2.6 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1)(2) (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Input Impedance (V EB = -2.0Vdc, I C = 0, f= 1.0MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time < NOTES : 1. Pulse Test: Pulse Width-300ms,Duty Cycle