MMBT2907LT1

TECHNICAL SPECIFICATION SEMICONDUCTOR RECTRON ECTRON MMBT2907LT1 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.020(0.500) 0.012(0.300) 0.043(1.100) 0.035(0.900) 0.004(0.100) 0.000(0.000) 0.020(0.50) 0.012(0.30) 0.100(2.550) 0.089(2.250) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.019(2.00) 0.071(1.80) 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS Zener Current ( see Table "Characteristics" ) o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C SYMBOL PD TJ TSTG VALUE 300 -55 to +150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL R θJA VF MIN. TYP. MAX. 417 UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (I C = -10 mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -10 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10 µ Adc, I C = 0) Collector Cutoff Current (V CE = -30Vdc, V BE(off) = -5.0Vdc) Collector Cutoff Current (V CB = -50Vdc, I E = 0) (V CB = -50Vdc, I E = 0, TA= 125 C) Base Current (V CE = -30Vdc, V EB(off) = -0.5Vdc) O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB -40 -60 -5.0 - -50 -0.02 -20 -50 Vdc Vdc Vdc nAdc µAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = -0.1mAdc, V CE = -10Vdc) (I C = -1.0mAdc, V CE = -10Vdc) ( I C = -10mAdc, V CE = -10Vdc) (I C = -150mAdc, V CE = -10Vdc)(2) (I C = -500mAdc, V CE = -10Vdc)(2) Collector-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) VCE(sat) hFE 35 50 75 30 -0.4 Vdc -1.6 -1.3 Vdc -2.6 - VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2)(3) (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Input Impedance (V EB = -2.0Vdc, I C = 0, f= 1.0MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time < < NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0% 3. fT is defined as the frequency at which |hfe| extrapolates to unity (V CC = -6.0Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) (V CC = -30Vdc ,I C = -150mAdc, I B1 = -15mAdc) ton td tr toff ts tf 45 10 40 100 80 30 ns ns RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2907LT1 ) 3.0 hFE,NORMALIZED CURRENT GAIN 2.0 VCE= -1.0V VCE= -10V TJ = 125OC 25OC 1.0 0.7 0.5 0.3 0.2 -0.1 -55OC -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 Figure 1. DC Current Gain VCE,COLLECTOR - EMITTERVOLTAGE(VOLTS) ±1.0 ±0.8 ±0.6 ±0.4 ±0.2 0 -0.005 IC,COLLECTOR CURRENT (mA) IC = - 1.0mA - 10mA - 100 mA - 500 mA -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 IB,BASE CURRENT (mA) Figure 2. Collector Saturation Region 300 200 100 70 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 2.0 V -200 -300 -500 td @ VBE(off)=0V tr 500 VCC=-30V IC/IB=10 TJ=25OC t,TIME(ns) 300 200 100 70 50 30 20 10 7.0 5.0 -5.0 -7.0 -10 t's=t's-1/8tf tf VCC=-30V IC/IB=10 IB1=IB2 TJ=25OC t,TIME(ns) -20 -30 -50 -70 -100 -200 -300 -500 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 3. Turn - On Time Figure 4. Turn - Off Time R ECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2907LT1 ) 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = - 1.0mA , RS=430Ω - 500 µA , RS=560Ω - 50 µA , RS=2.7kΩ - 100 µA , RS=1.6kΩ RS= OPTIMUM SOURCE RESISTANCE 10 f = 1.0 kHz NF,NOISE FIGURE (dB) NF,NOISE FIGURE (dB) 8.0 6.0 4.0 2.0 0 50 IC = - 50µA - 100 µA - 500 µA - 1.0mA 0.5 1.0 2.0 5.0 10 20 50 100 fT, CURRENT±GAIN Ð BANDWIDTH PRODUCT(MHz) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k f,FREQUENCY(KHz) RS,SOURCE RESISTANCE(OHMS) Figure 5.Frequency Effects 30 20 C,CAPACITANCE(pF) Ceb Figure 6.Source Resistance Effects 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20V TJ = 25OC -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE(VOLTS) IC,COLLECTOR CURRENT(mA) Figure 7.Capacitances -1.0 TJ = 25OC V,VOLTAGE (VOLTS) -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10V +0.5 0 COEFFICIENT (mV/ 5C) ±0.5 ±1.0 ±1.5 ±2.0 Figure 8.Currunt-Gain Bandwidth Product RθVC for VCE(sat) RθVB for VBE ±2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 9."On" Voltages Figure 10.Temperature Coefficients R ECTRON