MMBT3904

MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina 2." Fully ROHS Compliant "," 100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 10uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 100uAdc, I C = 0) Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) (I C = 1.0mAdc, V CE = 1.0Vdc) (I C = 10mAdc, V CE = 1.0Vdc) (I C = 50mAdc, V CE = 1.0Vdc) (I C = 100mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) VCE(sat) hFE 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Noise Figure (V CE = 5.0Vdc, I C = 100 uAdc, R S = 1.0kohms, f= 1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 300 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF kohms X 10 -4 umhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc) td tr ts tf 35 35 200 50 ns ns (V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc) < < Note : Pulse Test: Pulse Width-300ms,Duty Cycle-2.0% RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) - TJ= 25 10 7.0 O C -5000 3000 2000 TJ=125 C O VCC=40V IC=IB =10 CAPACITANCE (PF) Q, CHARGE (pC) 5.0 3.0 2.0 Cibo 1000 700 500 300 200 100 70 50 Cobo QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE ( V) IC, COLLECTOR CURRENT (mA) Figure 1. Capacitance 500 300 200 100 70 50 30 20 10 7 5 Figure 2. Charge Data IC/IB =10 500 300 200 VCC=40V IC=IB=10 tr, RISE TIME (ns) TIME (ns) tr@VCC=3.0V 100 70 50 30 20 10 40V 15V td@VOB=0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0V 50 70 100 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time 500 300 200 IC/IB =20 100 70 50 30 20 10 7 5 Figure 4. Rise Time t's=ts-1/8tf IB1=IB2 tf, FALL TIME (ns) 500 300 200 100 70 50 30 20 10 t's, STORAGE TIME (ns) IC/IB =10 VCC=40V IB1=IB2 IC/IB =20 IC/IB =20 IC/IB =10 IC/IB =10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) 12 14 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 SOURCE RESISTANCE=200W IC=1.0mA SOURCE RESISTANCE=200W IC=0.5mA SOURCE RESISTANCE=1.0k IC= 50uA 12 10 8 6 4 2 f = 1.0 kHz I =1.0mA C IC=0.5mA IC= 50uA IC= 100uA SOURCE RESISTANCE=500W IC= 100uA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (KHz) 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 RS, SOURCE RESISTANCE (KOHMS) Figure 7. hoe, OUTPUT ADMITTANCE (umhos) 300 100 50 20 10 5 2 1 Figure 8. hfe, CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT(mA) Figure 9. Current Gain hre, VOLTAGE FEEDBACK RATIO (X 10-4) 20 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance hie, INPUT IMPEDANCE (KOHMS) 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12.Voltage Feedback Ratio RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) hFE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ=+125OC 1.0 0.7 0.5 0.3 0.2 VCE =1.0V +25OC -55OC 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Figure 13.DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (V) 1.0 IC, COLLECTOR CURRENT (mA) TJ=25OC 0.8 0.6 0.4 0.2 0 0.01 IC=1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14.Collector Saturation Region 1.2 1.0 TJ=25OC 1.0 VBE (sat) @ IC/IB=10 COEFFICIENT (mV/OC) 0.5 0 -0.5 -1.0 -1.5 qVB FOR VBE(sat) qVC FOR VCE(sat) +25 C TO+125 C -55 C TO+25 C O O O O V, VOLTAGE (V) 0.8 VBE @ VCE=1.0V 0.6 0.4 0.2 0 -55 C TO+25 C +25 C TO+125 C O O O O VCE (sat) @ IC/IB=10 1.0 2.0 5.0 10 20 50 100 200 -2.0 0 20 40 60 80 100 120 140 160 180 200 IC,COLLECTOR CURRENT(mA) IC, COLLECTOR CURRENT (mA) Figure 15."ON" Voltages Figure 16.Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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