MMBT3906

MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * COLLECTOR 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) RATINGS O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina. 2."Fully ROHS Compliant", "100% Sn plating(Pb-free)". SYMBOL RqJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100uAdc, I C = 0) Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) (I C = -1.0mAdc, V CE = -1.0Vdc) (I C = -10mAdc, V CE = -1.0Vdc) (I C = -50mAdc, V CE = -1.0Vdc) (I C = -100mAdc, V CE = -1.0Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) hFE 60 80 100 60 30 -0.65 300 -0.25 -0.4 -0.85 -0.95 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz) Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz) Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Noise Figure (V CE = -5.0Vdc, I C = -100 uAdc, RS= 1.0k W , f= 1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 250 2.0 0.1 100 3.0 4.5 10 12 10 400 60 4.0 MHz pF pF kW X 10 -4 umhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc) td tr ts tf 35 35 225 75 ns (V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc) ns < Note : Pulse Test: Pulse Width