MMBT4401

MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 0.055(1.40) MECHANICAL DATA * * * * * 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted) O RATINGS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o O SYMBOL PD TJ TSTG O VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0) Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc) Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 0.1 0.1 Vdc Vdc Vdc uAdc uAdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) (I C = 1.0mAdc, V CE = 1.0Vdc) ( I C = 10mAdc, V CE = 1.0Vdc) (I C = 150mAdc, V CE = 1.0Vdc) (I C = 500mAdc, V CE = 2.0Vdc) Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) hFE 20 40 80 100 40 0.75 300 0.4 0.75 0.95 1.2 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) fT Ccb Ceb hie hre hfe hoe 250 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 MHz pF pF kohms X 10 -4 umhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 15 20 225 30 ns ns (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) < Note : Pulse Test: Pulse Width-300ms,Duty Cycle