MMBTA13

MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) RATINGS o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes: 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Complant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 100 uAdc, V BE = 0) Collector Cutoff Current (V CB = 30Vdc, I E = 0) Emitter Cutoff Current (V EB = 10Vdc, I C = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nVdc nVdc Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (I C = 10mAdc, V CE = 5.0Vdc) (I C = 100mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 100mAdc, I B = 0.1mAdc) Base-Emitter On Voltage (I C = 100mAdc, V C E = 5.0Vdc) hFE VCE(sat) VBE 5000 10,000 1.5 2.0 Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I C = 10mAdc, V CE = 5.0Vdc, f= 100MHz) < Notes : 1. Pulse Test: Pulse Width-300ms,Duty Cycle