MMST2222A

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST2222A SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.6 A * Collector-base voltage V(BR)CBO: 75 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation @TA=25oC Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 -55 to +150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 10 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µ Adc, I C = 0) Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) (V CB = 60Vdc, I E = 0, TA= 125 C) Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0) Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL 40 75 6.0 - 10 10 10 10 20 Vdc Vdc Vdc nAdc nAdc µAdc µAdc nAdc ON CHARACTERISTICS (1) DC Current Gain (I C = 100 µ A, V CE = 10Vdc) (I C = 1.0mAdc, V CE = 10Vdc) (I C = 10mAdc, V CE = 10Vdc) (I C = 150mAdc, V CE = 10Vdc) (I C = 500mAdc, V CE = 10Vdc) (I C = 10mAdc, V CE = 10Vdc,TA=-55 C) (I C = 150mAdc, V CE = 1.0Vdc) Collector-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) ( I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) O 35 50 75 hFE 100 40 50 35 0.6 - 300 0.3 Vdc 1.0 1.2 2.0 Vdc - VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Output Capacitance (I E = 0, V CB = 10Vdc, f= 1.0MHz) Noise Figure (I C = 100 µ Adc, V CE = 10Vdc, R S = 1.0k Ω , f= 1.0kHz) fT Cibo Cobo NF 300 25 8 4.0 MHz pF pF dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE(off) = 0.5Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 10 ns 25 225 ns 60 (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) NOTES : 1. Short duration test pulse used to minimize self-heating effect. RECTRON