MMST2907A

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST2907A SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -10mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -10 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10 µ Adc, I C = 0) Collector Cutoff Current (V CB = -35Vdc,I B = 0) Collector Cutoff Current (V CB = -50Vdc, I E = 0) Emitter Cutoff Current (V EB = -3.0Vdc, I C = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO -60 -60 -5 -0.05 -0.01 -0.01 Vdc Vdc Vdc µAdc µAdc µAdc Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = -0.1mA, V CE = -10Vdc) (I C = -1mAdc, V CE = -10Vdc) (I C = -10mAdc, V CE = -10Vdc) (I C = -150mAdc, V CE = -10Vdc) (I C = -500mAdc, V CE = -10Vdc) Collector-Emitter Saturation Voltage (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (I C = -500mAdc, I B = -50mAdc) VCE(sat) VBE(sat) hFE 75 100 100 100 50 300 -0.6 -1.2 Vdc Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) Input Capacitance (V EB =-2Vdc, f= 100MHz) Output Capacitance (I E = 0, V CB = -10Vdc, f= 1MHz) fT Cibo Cobo 200 30 8 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) (V CC = -30Vdc ,V BE(OFF) =-1.5Vdc,I C = -150mAdc, I B1 = -15mAdc) ton td tr toff ts tf 50 10 40 100 80 30 ns ns RECTRON