MMST3906

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST3906 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation (1) Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 NOTES : 1.Valid provided that terminals are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS (2) Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -10 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10 µ Adc, I C = 0) Collector Cutoff Current (V CE = -40Vdc,I B =0) Collector Cutoff Current (V CB = -40Vdc, I E = 0) Emitter Cutoff Current (V EB = -5Vdc, I C = 0) Base Cutoff Current (V CE = -30Vdc, V EB(off) = -3.0Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO IBL -40 -40 -5.0 -0.1 -0.1 -0.1 -50 Vdc Vdc Vdc µAdc µAdc µAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS (2) DC Current Gain (I C = -100 µ Adc, V CE = -1.0Vdc) (I C = -1.0mAdc, V CE = -1.0Vdc) (I C = -10mAdc, V CE = -1.0Vdc) (I C = -50mAdc, V CE = -1.0Vdc) (I C = -100mAdc, V CE = -1.0Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) hFE 60 80 100 60 30 -0.65 VBE(sat) 300 -0.20 Vdc -0.30 -0.85 -0.95 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 1.0kHz) Output Capacitance (V CB =-5.0Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB =-0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Noise Figure (I C = -100 µ Adc, V CE = -5.0Vdc, R S = 1.0k Ω , f= 1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 300 2.0 0.1 100 3.0 4.5 10 12 10 400 60 4.0 MHz pF pF kΩ X 10-4 µs dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -3Vdc, V BE = -0.5Vdc, I C = -10mAdc, I B1 = -1mAdc) td tr ts tf 35 ns 35 225 ns 75 (V CC = -3Vdc, I C = -10mAdc, I B1 = I B2 = -1mAdc) < < NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0% RECTRON