MMST4401

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST4401 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation (1) Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 NOTES : 1.Valid provided that terminals are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS (2) Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 100 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 100 µ Adc, I C = 0) Collector Cutoff Current (V CE = 35Vdc,I B =0) Collector Cutoff Current (V CB = 35Vdc, I E = 0) Emitter Cutoff Current (V EB = 5Vdc, I C = 0) Base Cutoff Current (V CE = 35Vdc, V EB(off) = 0.4Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO IBL 40 60 6.0 0.5 0.1 0.1 100 Vdc Vdc Vdc µAdc µAdc µAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS (2) DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) (I C = 1.0mAdc, V CE = 1.0Vdc) (I C = 10mAdc, V CE = 1.0Vdc) (I C = 150mAdc, V CE = 1.0Vdc) (I C = 500mAdc, V CE = 2.0Vdc) Collector-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) hFE 20 40 50 100 40 VBE(sat) 300 0.40 Vdc 0.75 0.95 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 5Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) fT Cob Ceb hie hre hfe hoe 250 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 MHz pF pF kΩ X 10-4 µs SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE = 2Vdc, I C = 150mAdc, I B1 = 15mAdc) td tr ts tf 15 ns 20 225 ns 30 (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) < < NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0% RECTRON