MMST4403

SEMICONDUCTOR TECHNICAL SPECIFICATION R ECTRON MMST4403 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.6 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation (1) Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 NOTES : 1.Valid provided that terminals are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS (2) Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = -100 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100 µ Adc, I C = 0) Collector Cutoff Current (V CE = -35Vdc,I B =0) Collector Cutoff Current (V CB = -35Vdc, I E = 0) Emitter Cutoff Current (V EB = -4Vdc, I C = 0) Base Cutoff Current (V CE = -35Vdc, V EB(off) = -0.4Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO IBL -40 -40 -5.0 -0.1 -0.1 -0.1 -100 Vdc Vdc Vdc µAdc µAdc µAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS (2) DC Current Gain (I C = -100 µ Adc, V CE = -1.0Vdc) (I C = -1.0mAdc, V CE = -1.0Vdc) (I C = -10mAdc, V CE = -1.0Vdc) (I C = -150mAdc, V CE = -2.0Vdc) (I C = -500mAdc, V CE = -2.0Vdc) Collector-Emitter Saturation Voltage (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) VCE(sat) hFE 30 60 100 100 30 -0.75 VBE(sat) 300 -0.40 Vdc -0.75 -0.95 -1.30 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 1.0kHz) Output Capacitance (V CB =-10Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB =-0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) fT Cobo Cebo hie hre hfe hoe 200 1.5 0.1 60 1.0 8.5 30 15 8.0 400 100 MHz pF pF kΩ X 10-4 µs SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -30Vdc, V BE = -2.0Vdc, I C = -150mAdc, I B1 = -15mAdc) td tr ts tf 15 ns 20 225 ns 30 (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) < < NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0% RECTRON RATING AND CHARACTERISTICS CURVES ( MMST4403 ) VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 IB,BASE CURRENT (mA) IC = 1.0 mA IC = 10 mA IC = 30 mA IC = 100 mA IC = 300mA 1.0 10 100 Figure 1. Typical Collector Saturation Region 30 20 Cibo CAPACITANCE(pF) 10 5.0 Cobo 1.0 -0.1 -1.0 REVERSE VOLTS (V) -10 -30 Figure 2.Capacitances(Typical) RECTRON