SEMICONDUCTOR
TECHNICAL SPECIFICATION
R ECTRON
MMST5551
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
* Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.2 A * Collector-base voltage V(BR)CBO: 160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C
SOT-323
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram
0.051(1.30) 0.047(1.20)
REF .040(1.01)
0.092(2.35) 0.089(2.25) 0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
0.052(1.33) 0.050(1.27)
0.081(2.05) 0.077(1.95)
Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW
o o o
C C
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF MIN. TYP. MAX. 625 UNITS
o
C/W
Volts 2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) C ollector-Base Breakdown Voltage (I C = 100 µ Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µ Adc, I C = 0) Collector Cutoff Current (V CB = 120Vdc, I E = 0) Emitter Cutoff Current (V EB = 3Vdc, I C = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 160 180 5 50 50 Vdc Vdc Vdc nAdc nAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain (I C = 1mAdc, V CE = 5Vdc) (I C = -10mAdc, V CE = 5Vdc) (I C = 50mAdc, V CE = 5Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) VCE(sat) hFE 80 80 30 VBE(sat) 250 0.15 Vdc 0.2 1 1 Vdc -
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 10Vdc, I E = 0, f= 1.0MHz) Noise figure (I C = 0.2mAdc, V CE = 5Vdc, f= 1.0kHz,Rg=10 Ω) fT Cob NF 100 300 6 8 MHz pF dB
RECTRON
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