SE1L

SE1L

  • 厂商:

    RECTRON

  • 封装:

  • 描述:

    SE1L - SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere - Rectron...

  • 详情介绍
  • 数据手册
  • 价格&库存
SE1L 数据手册
SE1L THRU SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * * * * * High r eliability Low l eakage L ow forward voltage H igh current capability S uper fast switching speed H igh surge capability G ood for switching mode circuit Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0. 016 g ram SE4L SOD-123FL .114 (2.9) .106 (2.7) .077 (1.95) .069 (1.75) MECHANICAL DATA .035 (0.90) .028 (0.70) .008 (0.20) .039 (1.00) .035 (0.90) .150 (3.8) .142 (3.6) .052 (1.32) .050 (1.28) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwis e s pecified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) .033 (0.85) .030 (0.75) .044 (1.12) .043 (1.08) .033 (0.85) .030 (0.75) MAXIMUM RATINGS ( At T A = 2 5oC unless otherwise noted) R ATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 5 5 oC Peak Forward Surge Current I FM ( surge):8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Te mperature Ran g e SYMBOL VRRM VRMS VDC IO I FSM CJ T J , T STG SE1L 50 35 50 SE2L 100 70 100 1.0 25 20 -55 to + 150 SE3L 150 105 150 SE4L 200 140 200 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. 3 .“Fully ROHS compliant”, “100% Sn plating (Pb-free)”. @T A = 2 5 o C @T A = 100 o C SYMBOL VF IR trr SE1L SE2L 0.95 5.0 100 35 SE3L SE4L UNITS Volts uAmps nSec 2006-3 REV:O RATING AND CHARACTERISTIC CURVES ( SE1L THRU SE4L ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURENT, (A) 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) PULSE GENERATOR FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A (NOTE 2) 1.0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 1cm 0 25 50 75 100 125 150 175 SET TIME BASE FOR 10 ns/cm AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD 100 TJ = 100 INSTANTANEOUS FORWARD CURRENT, (A) 10 CHARACTERISTICS 1.0 10 .1 TJ = 25 1.0 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 35 30 25 20 15 10 5 0 1 2 5 10 20 50 100 8.3ms Single Half Sine-Wave (JEDEC Method) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, ( V ) Mounting Pad Layout .052 (1.32)REF .035 (0.9)REF .033 (0.85)REF .044 (1.12)REF .033 (0.85)REF .150 (3.8)REF Dimensions in inches and (millimeters) DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
SE1L
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,主要应用于工业控制、消费电子等领域。

2. 器件简介:该器件是意法半导体公司生产的高性能微控制器,具有多种通信接口和外设,适用于需要高性能处理能力的场合。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考数据手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:具备多种功能模块,如ADC、DAC、定时器、通信接口等,支持多种通信协议。

6. 应用信息:广泛应用于工业控制、医疗设备、智能家居等领域。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。

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