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SM4935

SM4935

  • 厂商:

    RECTRON

  • 封装:

  • 描述:

    SM4935 - SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volt...

  • 详情介绍
  • 数据手册
  • 价格&库存
SM4935 数据手册
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * * * * * * G lass p assivated d evic e I deal f or s urface m ounted a pplication s L ow l eakage c urren t M etallurgically b onded c onstructio n M ounting p osition: A n y W eight: 0 .015 g ram SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER SM4933 THRU SM4937 MECHANICAL DATA DISCONTINUED- * Epoxy : Device has UL flammability classification 94V-0 D co is ed inu nt .205 ( 5.2 ) .190 ( 4.8 ) SOLDERABLE ENDS MELF "This series is replaced by the FM493X series that meets to the same fit and function parameters and share the same solder pad layout. The FM493X series is preferred for error-free vacuum pick-up and PCB assembly." .024 ( 0.6 ) .016 ( 0.4 ) .106 ( 2.7 ) .095 ( 2.4 ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions i n i nches a nd ( millimeters ) MAXIMUM RAT INGS (@ TA=25 OC unless otherwise noted) R ATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 5 5 OC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating Te mperature Ran g e Storage Temperature R an g e O SYMBOL VRRM VRMS VDC IO I FSM CJ TJ T STG SM4933 50 35 50 SM4934 100 70 100 SM4935 200 140 200 1.0 30 15 150 -55 to + 150 SM4936 400 280 400 SM4937 600 420 600 UNITS Volts Volts Volts Amps Amps pF 0 0 C C E LECTRICAL CHARACTERISTICS (@TA=25 C unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC Maximum Full Load Reverse Current, Full cycle Average T A = 55 OC Maximum Average Reverse Current at Rated DC Blocking Voltage @T A = 2 5 o C @T A = 1 00 o C trr SYMBOL VF IR SM4933 SM4934 SM4935 1.2 50 2 100 200 SM4936 SM4937 UNITS Volts mA uA uA nSec 2007-5 Maximum Reverse Recovery Time (Note 4) NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. 3. Test Conditions: IF= 0.5A, IR= -1.0A, IRR= -0.25A. RATING AND CHARACTERISTICS CURVES ( SM4933 THRU SM4937 ) IFM 1.0 8 115Va 10K 60Hz 2W 7 6 C.P.CLARE HPG 1002 5 4 1 AMP SLO-BLO FUSE C1 1.0uF 300V 1 2 3.8uH 3 /1.4 30 50W NON-INDUCTIVE UNIT UNDER TEST 1.0 Adc FROM CONSTANT R2 VOLTAGE SUPPLY C1 1 RIPPLE = 3mVrms MAX 1.0uF 10W 300V NONINDUCTIVE Zout 11/2 MAX DC to 2kHz % CARBON CORE FOR RECTIFIER trr i(t) di/dt = 50A/mS 0 30 Vdc CONSTANT VOLTAGE SUPPLY MINIMIZE ALL LEAD LENGTHS A-TEKTRONIX 545A. K PLUG IN PRE AMP P6000 PROBE OR EQUIVALENT R2-TEN-1W 10 IN PARALLEL R1-ADJUSTED FOR 1.4£[ BETWEEN POINT 2 OF RELAY AND RECTIFIER 10 TA = 25 INDUCTIVE = 3.8uH 0 IRM (REC) 1cm SET TIME BASE FOR 50/100 ns/cm FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 1.0 AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) 1000 0.8 0.6 0.4 0.2 0 Single Phase Half Wave 60Hz Resistive or Inductive Load 100 TA = 100 OC T A = 7 5 OC 10 1.0 T A = 2 5 OC 0 25 50 75 100 125 150 175 0.1 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, (OC) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.2 TYPICAL FORWARD CURRENT DERATING CURVE FIG.3 TYPICAL REVERSE CHARACTERISTICS RATING AND CHARACTERISTICS CURVES ( SM4933 THRU SM4937 ) INSTANTANEOUS FORWARD CURRENT, (A) PEAK FORWARD SURGE CURRENT, (A) 20 10 3.0 1.0 0.3 0.1 0.03 0.01 0 200 150 125 100 T J = 2 5 OC 8.3ms Single Half Sine-Wave (JEDED Method) 50 30 20 10 Pulse Width=300uS 1% Duty Cycle 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 INSTANTANEOUS FORWARD VOLTAGE, (V) NUMBER OF CYCLES AT 60Hz FIG.4 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 200 JUNCTION CAPACITANCE, (pF) FIG.5 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 60 40 20 10 6 4 2 1 0.1 0.2 0.4 1.0 2 4 10 T J = 2 5 OC 20 40 100 REVERSE VOLTAGE, (V) FIG.6 TYPICAL JUNCTION CAPACITANCE Mounting Pad Layout .100 (2.54) F-SLOT WIDTH OPTIMUM PAD SIZE .100 (2.54) .100 (2.54) .200 (5.08) .300 (7.62) Dimensions in inches and (millimeters) DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
SM4935
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚、复位引脚等,具体分配需参考芯片手册。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,支持多种工作电压和I/O标准。

5. 功能详解:包括核心功能、外设功能和通信接口等,具体功能需结合芯片手册和参考设计进行分析。

6. 应用信息:适用于需要高性能处理和丰富外设接口的应用场景,如电机控制、工业自动化等。

7. 封装信息:采用LQFP48封装,具有较好的热性能和电气性能。
SM4935 价格&库存

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