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T4ARS3507M

T4ARS3507M

  • 厂商:

    RECTRON

  • 封装:

  • 描述:

    T4ARS3507M - TRANSIENT VOLTAGE SUPPRESSORS GPP BRIDGE RECTIFIER - Rectron Semiconductor

  • 数据手册
  • 价格&库存
T4ARS3507M 数据手册
T4ARS3505M T HRU T4ARS3507M TRANSIENT VOLTAGE SUPPRESSORS GPP BRIDGE RECTIFIER VOLTAGE RANGE 600 to 1000 Volts CURRENT 35 Amperes FEATURES * * * * * * Low leakage Low forward voltage Surge overload rating : 300 amperes peak Mounting position: Any Ideal for printed circuit boards High forward surge current capability RS-35M .189 (4.8) .173 (4.4) 1.193 (30.3) 1.169 (29.7) .150 (3.8) .134 (3.4) f .138 (3.5) .126 (3.2) .114 (2.9) .098 (2.5) .031 (0.8) .023 (0.6) .402 (10.2) .303 (7.7) .303 (7.7) .386 (9.8) .287 (7.3) .287 (7.3) MECHANICAL DATA * Epoxy: Device has UL flammability classification 94V-O * UL list the recognized component directory,file #E94233 .800 (20.3) .697 (17.7) .708 (18.0) .669 (17.0) .197 (5) .087 (2.2) .071 (1.8) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .043 (1.1) .035 (0.9) Dimensions in inches and (millimeters) MAXIMUM RAT INGS (@ TA=25 OC unless otherwise noted) R ATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T C = 5 5 o C (With Heat-sink) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Peak Power Dissipation at T A =25 OC,T P =1mS (Note 1) Breakdown Voltage Range at I T =1mA Maximum Peak Pulse Current Maximum Clamping Voltage at IPPM =0.73A Operating and Storage Temperature Ran g e O SYMBOL VRRM VRMS VDC IO I FSM PPPM VBR IPPM VC T J, T STG T4ARS3505M 600 420 600 T4ARS3506M 800 560 800 35 300 Maximum 400 380 ~ 420 0.73 548 -55 to + 150 .165 (4.2) .150 (3.8) .106 (2.7) .096 (2.3) T4ARS3507M 1000 700 1000 .441 (11.2) .425 (10.8) UNITS Volts Volts Volts Amps Amps Watts Volts Amps Volts 0 C E LECTRICAL CHARACTERISTICS (@TA=25 C unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 17.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @T A = 25 o C @T A = 1 00 o C SYMBOL VF IR O T4ARS3505M T4ARS3506M 1.1 5.0 200 T4ARS3507M UNITS Volts uAmps 2007-7 NOTES : 1 . Non-repetitive current pulse, per Fig.8 and derated above TA=25 C per Fig.7. 2. "Fully ROHS compliant", "100% Sn plating (Pb-free)". RATING AND CHARACTERISTICS CURVES ( T4ARS3505M THRU T4ARS3507M ) INSTANTANEOUS FORWARD CURRENT, (A) 30 20 POWER DISSIPATION, (W) 60 50 40 30 20 10 0 sine wave TJ = 150 OC 10 5 2 1 0.5 0.2 0 0.2 0.4 0.6 0.8 1 Pulse test per one diode TC= 150OC (TYP) TC= 25OC (TYP) 1.2 1.4 1.6 0 4 8 12 16 20 24 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, (A) FIG.1 TYPICAL INSTANTANEOUS FORWARD CHARACTERITICS PEAK FORWARD SURGE CURRENT, (A) FIG.2 POWER DISSIPATION 4 AVERAGE FORWARD CURRENT, (A) 300 sine wave 0 IFSM 8.3ms 8.3ms 3 200 1 cycle non-repetitive Tj=25 2 on glass-epoxi substrate 100 1 P.C.B soldering land 5mmf sine wave R-load free in air 0 0 1 2 5 10 20 50 100 0 0 40 80 120 160 NUMBER OF CYCLE AMBIENT TEMPERATURE, (OC) FIG.3 SURGE FORWARD CURRENT CAPABILITY AVERAGE FORWARD CURRENT, (A) FIG.4 TYPICAL FORWARD CURRENT DERATING CURVE 1.2 THERMAL RESISTANCE (OC/W) 50 40 30 heatsink Tc Tc 1.0 0.8 0.6 0.4 0.2 0 2 with thermal compound 20 10 sine wave R-load on heatsink 0 10 30 50 70 90 110 130 150 170 3 4 5 6 7 8 HEAT SINK TEMPERATURE, (OC) MOUNTING TORQUE (kg.cm) FIG.5 TYPICAL FORWARD CURRENT DERATING CURVE FIG.6 CONTACT THERMAL RESISTANCE fcf RATING AND CHARACTERISTICS CURVES ( T4ARS3505M THRU T4ARS3507M ) 100 PEAK PULSE POWER OR CURRETN DERATING IN PERCENTAGE, (%) 100 Non-Repetitive Pulse Waveform Shown in Fig.9 TA=25OC PEAK PULSE POWER, (KW) 75 10 50 1.0 25 0.1 0.1u 1.0u 10u 100u 1m 10u 0 0 25 50 75 100 125 150 175 200 PULSE WIDTH,(S) AMBIENT TEMPERATURE, (OC) FIG.7 PEAK PULSE POWER RATING CURVE 150 tr = 10usec. FIG.8 PULSE DERATING CURVE 100000 f = 1MHz Vsig = 50mVp-p TJ= 25 OC Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of I PPM Peak Value IPPM PEAK PULSE CURRENT, (%) 100 CJ, CAPACITANCE, (pF) 10000 HALF VALUE - IPPM Measured at Zero Bias 2 10/1000usec. Waveform as Defined by R.E.A. 50 1000 Measured at Stand off Voltage,VWM td 0 0 1.0 2.0 TIME, (mS) 3.0 4.0 100 1.0 10 V(BR), BREAKDOWN VOLTAGE, (V) 100 200 FIG.9 PULSE WAVEFORM FIG.10 TYPICAL JUNCTION CAPACITANCE Schematic DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
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