1SS83

1SS83

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    1SS83 - Silicon Epitaxial Planar Diode for High Voltage Switching - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
1SS83 数据手册
1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0563-0300 (Previous: ADE-208-150B) Rev.3.00 Apr 18, 2005 Features • High reverse voltage. (VR = 250 V) • High reliability with glass seal. Ordering Information Type No. 1SS83 Cathode band Verdure 2nd band Light Blue 3rd band Light Blue Package Name DO-35 Package Code (Previous Code) GRZZ0002ZB-A (DO-35) Pin Arrangement 1 3rd band 2nd band Cathode band 2 1. Cathode 2. Anode Rev.3.00 Apr 18, 2005 page 1 of 4 1SS83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Symbol VRM * VR IO IFM 2 IFSM * Pd Tj 1 Value 300 250 200 625 1 400 175 Unit V V mA mA A mW °C °C Storage temperature Tstg −65 to +175 Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Reverse recovery time Symbol IR1 IR2 VF C trr Min — — — — — Typ — — — 1.5 — Max 200 100 1.0 — 100 Unit nA µA V pF ns Test Condition VR = 250 V VR = 300 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω Rev.3.00 Apr 18, 2005 page 2 of 4 1SS83 Main Characteristic 10-1 10-5 Ta = 75°C Reverse current IR (A) Forward current IF (A) 10-6 Ta = 50°C 10-7 10-2 Ta = 12 Ta = 5°C 75 Ta = °C 25°C Ta = -25°C 10-3 Ta = 25°C 10 -8 10-4 0 0.2 0.4 0.6 0.8 1.0 1.2 10-9 0 50 100 150 200 250 300 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 1.0 0.1 1.0 10 Reverse voltage VR (V) 100 Fig.3 Capacitance vs. Reverse voltage Rev.3.00 Apr 18, 2005 page 3 of 4 1SS83 Package Dimensions JEITA Package Code SC-40 RENESAS Code GRZZ0002ZB-A Previous Code DO-35 / DO-35V MASS[Typ.] 0.13g L E L φb φD Reference Dimension in Millimeters Symbol φb φD E L Min 26.0 Nom 0.5 2.0 - Max 4.2 - Rev.3.00 Apr 18, 2005 page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
1SS83
1. 物料型号: - 型号:1SS83 - 封装:DO-35,旧编码GRZZ0002ZB-A

2. 器件简介: - 1SS83是一款用于高压开关的硅外延平面二极管,具有高反向电压和高可靠性,采用玻璃密封技术。

3. 引脚分配: - 引脚1:阴极(Cathode) - 引脚2:阳极(Anode)

4. 参数特性: - 最大反向峰值电压:300V - 反向电压:250V - 平均整流电流:200mA - 峰值正向电流:625mA - 非重复性峰值正向浪涌电流:1A - 最大耗散功率:400mW - 结温:175°C - 存储温度:-65至+175°C

5. 功能详解: - 电气特性: - 反向电流:在250V反向电压时,最大200nA;在300V反向电压时,最大100μA。 - 正向电压:在100mA正向电流时,最大1.0V。 - 电容:在0V反向电压和1MHz频率下,最大1.5pF。 - 反向恢复时间:在30mA正向电流和3mA反向电流下,最大100ns。

6. 应用信息: - 该二极管适用于高压开关应用,并且需要在电路设计中考虑安全性,例如放置替代、辅助电路,使用非易燃材料,防止任何故障或事故。

7. 封装信息: - JEITA封装代码:SC-40 - 封装重量:0.13g - 封装尺寸(单位:毫米): - 最小直径:0.5mm - 中心直径:2.0mm - 最大直径:4.2mm - 长度:26.0mm
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