2SA1744-AZ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −3 A) VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A) • Full-mold package that does not require an insulating board or bushing Electrode Connection 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −15 A IC(pulse)* −30 A IB(DC) −7.5 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13160EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 6$ (/(&75,&$/&+$5$&7(5,67,&67A °°& Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = −8.0 A, IB = −0.8 A, L = 1 mH −60 V Collector to emitter voltage VCEX(SUS) IC = −8.0 A, IB1 = −IB2 = −0.8 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −60 V Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −1.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −3.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −8.0 A 60 400 Collector saturation voltage VCE(sat)1* IC = −8.0 A, IB = −0.4 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −12 A, IB = −0.6 A −0.5 V Base saturation voltage VBE(sat)1* IC = −8.0 A, IB = −0.4 A −1.2 V Base saturation voltage VBE(sat)2* IC = −12 A, IB = −0.6 A −1.5 V Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 300 pF 80 MHz Gain bandwidth product fT VCE = −10 V, IC = −1.5 A Turn-on time ton Storage time tstg IC = −8.0 A, RL = 6.3 Ω, IB1 = −IB2 = −0.4 A, VCC ≅ −50 V 0.3 µs 1.5 µs 0.3 µs Refer to the test circuit. 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