2SB1048

2SB1048 Silicon PNP Epitaxial, Darlington REJ03G0665-0200 (Previous ADE-208-1040) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 2,4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 1 3 Note: Marking is “BT” *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Ratings –60 –60 –7 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 2SB1048 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) Min –60 –60 — — 2000 — — Typ — — — — — — — Max — — –10 –10 100000 –2.0 –2.0 Unit V V µA µA V V Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IE = 0 VCE = –3 V, IC = –500 mA*1 IC = –500 mA, IB = –1 mA*1 IC = –500 mA, IB = –1 mA*1 Rev.2.00 Aug 10, 2005 page 2 of 5 2SB1048 Main Characteristics Maximum Collector Dissipation Curve Area of Safe Operation –10 Collector Power Dissipation Pc (W) (on the alumina ceramic board) 1.2 Collector Current IC (A) –3 iC (peak) 1µ PW –1.0 –0.3 –0.1 –0.03 –0.01 –3 s 1m 0.8 = 10 s ms Ta = 25°C 1 Shot Pulse 0.4 0 50 100 150 –10 –30 –100 –300 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 100,000 Typical Output Characteristics –1.0 –0 DC Current Transfer Ratio hFE Ta = 25°C .6 m PC = 1 Collector Current IC (A) –1 –0.8 m –0.2 –0.1 m 30,000 10,000 3,000 1,000 300 Ta = 75°C 25 –25 m VCE = –3 V Pulse W –0.6 –0.4 –0.2 0 –2 –4 –6 –0.04 m –0.02 m –0.01 m IB = 0 A –8 –10 100 –30 –100 –300 –1,000 –3,000 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) –10 –3 VBE (sat) –1.0 VCE (sat) Ta = 25°C IC/IB = 500 –0.3 –0.1 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SB1048 Transient Thermal Resistance 300 Thermal Resistance θj-a (°C/W) 100 30 10 3 1.0 0.3 1m Ta = 25°C Mounted on the Alumina Ceramic Board (12.5 × 30 × 0.7 mm) 10 m 100 m 1 10 100 1,000 Time t (s) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB1048 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SB1048BTTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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