2SC1213C-E

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC1213, 2SC1213A Silicon NPN Epitaxial ADE-208-1048 (Z) 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 4 4 V Collector current IC 500 500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 — — 50 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 35 — — 50 — — V I C = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 4 — — 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 — — 0.5 µA VCB = 20 V, IE = 0 60 — 320 60 — 320 VCE = 3 V, IC =10 mA hFE 10 — — 10 — — VCE = 3 V, I C = 500 mA*2 VCE(sat) — 0.2 0.6 — 0.2 0.6 V I C = 150 mA, I B = 15 mA*2 — 0.64 — — 0.64 — V VCE = 3 V, IC = 10 mA DC current tarnsfer ratio hFE* Collector to emitter saturation voltage 1 Base to emitter voltage VBE Notes: 1. The 2SC1213 and 2SC1213A are grouped by h FE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 2 2SC1213, 2SC1213A Collector Current IC (mA) 0.8 400 200 80 0.7 P C 0.6 60 = 40 0 m W 0.5 0.4 40 0.3 0.2 20 0.1 mA IB = 0 400 300 Typical Output Characteristics (2) 10 9 8 7 6 5 4 3 2 200 1 mA PC = 400 mW 100 IB = 0 0 6 8 10 2 4 Collector to Emitter Voltage VCE (V) 6 8 10 2 4 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 30 VCE = 3 V 10 3 25 –25 500 0 50 100 150 Ambient Temperature Ta (°C) Ta = 75°C 0 Collector Current IC (mA) Typical Output Characteristics (1) 1.0 0.9 100 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 1.0 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) 3 2SC1213, 2SC1213A DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 140 100 80 60 40 20 0 4 VCE = 3 V Ta = 25°C 120 2 5 50 100 200 10 20 Collector Current IC (mA) 500 2SC1213, 2SC1213A Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SC1213, 2SC1213A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : -538-6533/538-8577 Fax : -538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : -(2)-735-9218 Fax : -(2)-730-0281 URL : http://www.hitachi.com.hk Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6