2SC1906

2SC1906 Silicon NPN Epitaxial Planar REJ03G0693-0200 (Previous ADE-208-1058) Rev.2.00 Aug.10.2005 Application • VHF amplifier • Mixer, Local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 2SC1906 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cob VCE(sat) rbb’ • CC PG Min 30 19 2 — 40 600 — — — — — Typ — — — — — 1000 1.0 0.2 10 33 18 Max — — — 0.5 — — 2.0 1.0 25 — — Unit V V V µA MHz pF V ps dB dB Test conditions IC = 10 µA, IE = 0 IC = 3 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz f = 45 MHz VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA f = 200 MHz Rev.2.00 Aug 10, 2005 page 2 of 6 2SC1906 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 20 Typical Output Characteristics PC 180 = Collector Current IC (mA) 160 140 30 0 16 m W 200 120 12 100 8 80 60 100 4 40 IB = 20 µA 0 50 100 150 0 4 8 12 16 20 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 120 Typical Transfer Characteristics 20 DC Current Transfer Ratio hFE Collector Current IC (mA) 16 VCE = 10 V 100 80 60 40 20 VCE = 10 V 12 8 4 0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 0.5 1.0 2 5 10 20 50 100 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 1,200 1,000 800 600 400 200 0 0.1 VCE = 10 V f = 100 MHz Gain Bandwidth Product Curve 20 700 800 Collector Current IC (mA) 90 0 16 12 fT ,0 =1 00 z MH 8 4 600 500 0 4 8 12 16 20 0.3 1.0 3 10 30 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 6 2SC1906 Base Time Constant vs. Collector Currnt 200 12 Input Admittance vs. Frequency IC = 1 mA 10 8 6 4 2 100 2 mA 4 mA 8 mA 200 12 mA 250 Base time Constant rbb'•CC (ps) 100 50 20 10 5 Input Suceptance bie (mS) VCB = 10 V f = 31.8 MHz 50 f = 25 MHz yie = gie+jbie VCE = 9 V 2 0.1 0.2 0.5 1.0 2 5 10 0 2 4 6 8 10 12 Collector Current IC (mA) Input Conductance gie (mS) Reverse Transfer Admittance vs. Frequency Reverse Transfer Suceptance bre (mS) 0 yre = gre+jbre VCE = 9 V f = 25 MHz 50 100 Output Admittance vs. Frequency 6 Output Suceptance boe (mS) 5 4 3 2 100 1 50 f = 25 MHz 0 0.2 0.4 0.6 IC = 1 mA 2 4 8 200 12 250 –0.4 –0.8 200 250 IC = 21 mA 8 –1.2 yoe = goe+jboe VCE = 9 V 4 2 1 –1.6 0.8 1.0 1.2 –2.0 –0.10 –0.08 –0.06 –0.04 –0.02 0 Output Conductance goe (mS) Forward Transfer Admittance vs. Frequency Forward Transfer Suceptance bfe (mS) 20 0 –20 –40 –60 25f = –80 –100 –120 0 20 40 60 80 100 120 140 Reverse Transfer Conductance gre (mS) Conversion Gain vs. Local Oscillating Injection Voltage 17 IC = 1 mA 2 Conversion Gain CG (dB) yfe = gfe+jbfe VCE = 9 V 4 16 15 14 13 12 11 10 0 0.1 0.2 0.3 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject MH z2 00 8 15 0 100 80 50 12 25 Forward Transfer Conductance gfe (mS) Injection Voltage Vinj (V) Rev.2.00 Aug 10, 2005 page 4 of 6 2SC1906 Conversion Gain vs. Emitter Current 18 Conversion Gain CG (dB) 16 14 12 10 8 6 4 0 –1 –2 –3 –4 –5 –6 –7 VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject Emitter Current IE (mA) Rev.2.00 Aug 10, 2005 page 5 of 6 2SC1906 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-C Package Name TO-92(2) / TO-92(2)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC1906TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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