2SC2735

2SC2735 Silicon NPN Epitaxial REJ03G0706-0200 (Previous ADE-208-1075) Rev.2.00 Aug.10.2005 Application UHF/VHF Local oscillator, frequency converter Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “JC”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 2SC2735 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE Cob fT VOSC1 VOSC2 Conversion gain CG Min 30 20 3 — — 40 — 600 — — — Typ — — — — — — 0.85 1200 210 130 21 Max — — — 0.5 1.0 — 1.5 — — — — Unit V V V µA V pF MHz mV mV dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IC = 0 IC = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCC = 12 V, IC = 7 mA, fOSC = 300 MHz VCC = 12 V, IC = 7 mA, fOSC = 930 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, fOSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 200 MHz, fOSC = 230 MHz (0dBm) Noise figure NF — 6.5 — dB Rev.2.00 Aug 10, 2005 page 2 of 7 2SC2735 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 200 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 160 100 120 80 50 40 VCE = 10 V 1 2 5 10 20 50 0 50 100 150 0 Ambient Temperature Ta (°C) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 2.0 IE = 0 f = 1 MHz Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (GHz) 2.0 1.6 1.6 1.2 1.2 0.8 0.8 0.4 VCE = 10 V 1 2 5 10 20 50 0.4 0 0 1 2 5 10 20 50 Collector Current IC (mA) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) Base Time Constant rbb' CC (ps) 2.0 Emitter Common f = 1 MHz 20 Collector to Base Voltage VCB (V) Base Time Constant vs. Collector Current 1.6 16 VCB = 10 V f = 31.8 MHz 1.2 12 0.8 8 0.4 4 0 1 2 5 10 20 50 0 4 8 12 16 20 Collector to Base Voltage VCB (V) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 7 2SC2735 Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage Vosc1 (mV) 500 VCC = 12 V fosc = 300 MHz Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage Vosc1 (mV) 250 400 200 300 150 200 100 IC = 7 mA fosc = 300 MHz 100 50 0 2 4 6 8 10 0 4 8 12 16 20 Collector Current IC (mA) Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage Vosc2 (mV) 200 Supply Voltage VCC (V) Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage Vosc2 (mV) 200 160 160 120 120 80 80 40 VCC = 12 V fosc = 930 MHz 2 4 6 8 10 40 IC = 7 mA fosc = 930 MHz 4 8 12 16 20 0 0 Collector Current IC (mA) Supply Voltage VCC (V) Conversion Gain vs. Collector Current 25 20 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) Noise Figure vs. Collector Current Conversion Gain CG (dB) 15 Noise Figure NF (dB) 20 16 12 10 8 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) 1 2 3 4 5 5 4 0 2 4 6 8 10 0 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 7 2SC2735 VOSC2 UHF Oscillating Output Voltage Test Circuit L3 VCC 470 Ferrite Bead 1.2 p 9p L2 330 2,200 p ISV70 6.8 k 1,000 p L1 1,000 p 120 k D.U.T. VT 1,000 p VBB Vosc Output Unit C : F R:Ω 10 Dimensions of Cavity 15 5 8 26 L1 L2 (Dimensions in mm) (Dimensions in mm) L1 : Polyurethane Coated Copper Wire φ1.0 mm L2 : Polyurethane Coated Copper Wire φ0.8 mm L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω (1/4W)Resistor. Test Frequency : fosc = 930 MHz Test Equipment : YHP 4271A Vector Voltmeter Rev.2.00 Aug 10, 2005 page 5 of 7 10 2SC2735 VOSC1 VHF Oscillating Output Voltage Test Circuit VBB 2.2 k Vosc Output 1.5 p D.U.T. 7p 4,700 p 1.1 M 5.6 p L1 4,700 p 1SV70 200 12 p 20,000 p 4,700 p 1,000 p 200 µ VCC VT fosc Monitor Unit C : F R:Ω L:H L1 : Inside dia φ3 mm, φ3 mm Enameled Copper Wire 12 Turns Test Frequency : fosc = 300 MHz VHF Conversion Gain : Noise Figure Test Circuit 2,200 p fosc = 230 MHz (0 dBm) 1.5 p 560 f = 200 MHz Ferrite Bead L2 56 p D.U.T. L4 27 p foat = 30 MHz RL = 50 Ω VCC L1 4.2 p L3 2,200 p 330 2,200 p 18 p 80 p Unit C : F R:Ω VBB L1 : Inside dia φ5 mm, φ0.5 mm Enameled Copper Wire 4 Turns L2 : Inside dia φ4 mm, φ0.5 mm Enameled Copper Wire 4 Turns L3 : Inside dia φ3 mm, φ0.2 mm Enameled Copper Wire 6 Turns L4 : Outside dia φ5 mm Bobbin, φ0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead. Rev.2.00 Aug 10, 2005 page 6 of 7 2SC2735 Package Dimensions JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g D e A Q c E HE L A A xM S A b L1 A3 e LP Reference Symbol Dimension in Millimeters A2 A A1 S b b1 c b2 A-A Section e1 c1 I1 Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name 2SC2735JTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: 2-796-3115, Fax: 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0