2SC2853ETZ-E

2SC2853 Silicon NPN Epitaxial REJ03G0708-0300 (Previous ADE-208-1078A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 90 90 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 2SC2853 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 90 90 5 — — 400 — — — — Typ — — — — — — 0.05 0.7 310 3 Max — — — 0.1 0.1 800 0.10 1.0 — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 page 2 of 6 2SC2853 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 20 Typical Output Characteristics 26 24 22 20 18 16 14 12 10 Collector Current IC (mA) 16 PC 400 12 = 40 0 m W 8 200 4 8 6 4 2 µA IB = 0 0 50 100 150 0 20 40 60 80 100 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics 10 18 Typical Transfer Characteristics 100 VCE = 6 V Pulse Ta = 75°C 10 25°C –25°C 1.0 Collector Current IC (mA) 8 14 6 12 10 4 8 6 4 2 µA 2 IB = 0 0 4 8 12 16 20 Collector Current IC (mA) 16 0.1 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Collector Cut-Off Current vs. Collector to Base Voltage Collector Cut-Off Current ICBO (pA) Collector Cut-Off Current ICEO (nA) 1,000 75 C Base to Emitter Voltage VBE (V) Collector Cut-Off Current vs. Collector to Emitter Voltage 1,000 75° C 100 Ta = 25 –25 100 = Ta 25 10 10 –25 1.0 1.0 0.1 0 20 40 60 80 100 0.1 0 20 40 60 80 100 Collector to Base Voltage VCB (V) Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 3 of 6 2SC2853 Emitter Cut-Off Current vs.Emitter to Base Voltage Emitter Cut-Off Current IEBO (pA) 1,000 Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Collector to Emitter Breakdown Voltage V(BR)CER (V) 190 Typical Value IC = 1 mA 75 °C 100 180 Ta = 25 170 –2 10 5 160 1.0 150 0.1 0 2 4 6 8 10 140 10 100 1k 10 k 100 k Emitter to Base Voltage VEB (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1,000 Base to Emitter Resistance RBE (Ω) Collector to Emitter Saturation Voltage vs. Collector Current 1.0 Pulse IC = 10 IB DC Current Transfer Ratio hFE 300 Ta = 75°C 25 –25 0.3 100 0.1 Ta = 75°C 0.03 25 –25 30 VCE = 12 V Pulse 10 1 3 10 30 100 0.01 1 3 10 30 100 Collector Current IC (mA) Base to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product fT (MHz) 10 Pulse IC = 10 IB 3 1,000 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current VCE = 6 V 500 200 100 50 1.0 Ta =–25 C 75 0.3 25 20 10 0.5 0.1 1 3 10 30 100 1.0 2 5 10 20 50 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 6 2SC2853 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 10 IE = 0 f = 1 MHz 30 Noise Voltage Referred to Input vs. Collector Current VCE = 6 V Rg = 0 f = 1 kHz 3 10 Noise Voltage Referred to Input  en (nV/ √Hz) 1.0 3 0.3 1 1 3 10 30 100 0.1 0.1 0.3 1.0 3 10 Collector to Base Voltage VCB (V) Noise Voltage Referred to Input vs. Signal Source Resistance 1,000 Collector Current IC (mA) Noise Voltage Referred to Input vs. Collector to Emitter Voltage 1.0 Noise Voltage Referred to Input  en (nV/ √Hz) Noise Voltage Referred to Input  en (nV/ √Hz) VCE = 6 V f = 1 kHz 100 = 10 m A 0 1. 0.9 1 0. IC 0.8 10 0.7 IC = 1 mA Rg = 0 f = 1 kHz 1 3 10 30 100 1.0 0.6 0.1 10 0.5 100 1k 10 k 100 k Signal Source Resistance Rg (Ω) Noise Voltage Referred to Input vs. Frequency 2.0 VCE = 6 V Rg = 0 1.6 Collector to Emitter Voltage VCE (V) Noise Voltage Referred to Input  en (nV/ √Hz) 1.2 IC = 1 mA 10 0.4 0.8 0 10 100 1k 10 k 100 k Frequency f (Hz) Rev.2.00 Aug 10, 2005 page 5 of 6 2SC2853 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-A Package Name TO-92(1) / TO-92(1)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2853ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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