2SC4988FRTL-E

2SC4988 Silicon NPN Epitaxial REJ03G0738-0300 (Previous ADE-208-004A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is “FR”. *UPAK is a trademark of Renesas Technology Corp. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Collector to base voltage VCBO 15 Collector to emitter voltage VCEO 9 Emitter to base voltage VEBO 1.5 Collector current IC 100 Collector power dissipation PC 800*1 Junction temperature Tj 150 Storage temperature Tstg –55 to +150 Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm) Unit V V V mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 7 2SC4988 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 — — — 50 — 5.5 7.5 — Typ — — — — 120 1.1 8.5 10.5 1.3 Max — 1 1 10 250 1.6 — — 2.5 Unit V µA mA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00 Aug 10, 2005 page 2 of 7 2SC4988 Main Characteristics Collector Power Dissipation Curve Collector Power Dissipation Pc (mW) (on the alumina ceramic board) 1600 200 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE VCE = 5V 160 1200 120 800 80 400 40 0 0 50 100 150 200 1 2 5 10 20 50 100 Ambient Temperature Ta (°C) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage 1.8 IE = 0 f = 1 MHz 1.6 12 VCE = 5 V 10 8 6 4 2 0 1 2 5 10 20 50 100 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (GHz) 1.4 1.2 1.0 0.8 0.5 1 2 5 10 20 Collector Current IC (mA) Collector to Base Voltage VCB (V) Power Gain vs. Collector Current 20 5 VCE = 5V f = 900 MHz 16 Noise Figure vs. Collector Current VCE = 5V f = 900MHz 4 Power Gain PG (dB) 12 NF (dB) Noise Figure 3 8 2 4 0 1 2 5 10 20 50 100 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 7 2SC4988 S21 Parameter vs. Collector Current 20 |S21|2 (dB) 16 VCE = 5V f = 1 GHz 12 S21 Parameter 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 7 2SC4988 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 Ð10 Ð.2 Ð5 Ð4 Ð3 Ð.4 Ð.6 Ð.8 Ð1.5 Ð2 Ð1 –120° –60° –90° 180° 0° 150° 30° 1 1.5 2 120° S21 Parameter vs. Frequency 90° Scale: 5 / div. 60° –150° –30° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.01 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00 Aug 10, 2005 page 5 of 7 2SC4988 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.555 0.328 0.225 0.185 0.172 0.179 0.200 0.224 0.253 0.277 ANG. –66.6 –102.5 –133.1 –160.5 170.5 148.5 131.7 120.0 108.7 99.8 MAG. 9.68 5.98 4.24 3.31 2.71 2.34 2.06 1.86 1.71 1.58 S21 ANG. 124.7 102.2 89.3 80.3 72.4 65.8 59.9 54.4 49.6 44.9 MAG. 0.0717 0.106 0.138 0.170 0.204 0.237 0.270 0.303 0.334 0.365 S12 ANG. 62.3 59.4 60.8 61.4 61.3 60.7 59.5 58.1 56.4 54.5 MAG. 0.672 0.462 0.371 0.326 0.301 0.285 0.276 0.268 0.262 0.256 S22 ANG. –39.7 –49.8 –53.4 –56.4 –59.9 –63.6 –68.2 –73.2 –78.7 –84.7 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.220 0.135 0.120 0.132 0.155 0.174 0.196 0.225 0.246 0.267 ANG. –101.8 –149.0 175.1 148.0 129.6 117.3 105.5 97.8 92.0 84.5 MAG. 13.13 7.08 4.83 3.70 3.02 2.58 2.26 2.04 1.86 1.72 S21 ANG. 106.0 90.8 82.2 75.5 69.5 63.9 58.8 54.1 50.0 45.7 MAG. 0.0532 0.0946 0.137 0.178 0.220 0.258 0.296 0.331 0.364 0.397 S12 ANG. 71.5 73.6 72.6 70.8 68.2 65.6 62.9 60.3 57.5 54.7 MAG. 0.401 0.277 0.239 0.221 0.212 0.205 0.201 0.197 0.193 0.190 S22 ANG. –48.6 –49.0 –50.1 –53.4 –57.9 –63.1 –69.1 –75.7 –82.1 –89.4 Rev.3.00 Aug 10, 2005 page 6 of 7 2SC4988 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SC4988FRTL-E Quantity 1000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Rev.3.00 Aug 10, 2005 page 7 of 7 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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